{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STD9N60M2","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STD9N60M2","canonicalUrl":"https://icboms.com/stmicroelectronics/STD9N60M2","factsUrl":"https://icboms.com/api/mcp/products/STD9N60M2","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics MDmesh™ II Plus, STD9N60M2, N-Channel MOSFET, 600 V Vdss, 5.5 A Id, 780 mOhm Rds(on) at 10 V, 10 nC Qg, DPAK (TO-252), Surface Mount, 150 °C TJ.","salesMarkdown":"## 600 V N-channel in a DPAK — where the MDmesh™ II Plus fits This is a 600 V class part, so it is aimed at offline power conversion: flyback converters for AC-DC adapters and chargers, PFC boost stages, auxiliary power supplies in industrial and telecom gear, and LED lighting drivers. ## 780 mOhm Rds(on) — the conduction loss anchor That is the number to use for worst-case conduction loss calculations at 25 °C junction — expect it to roughly double at 125 °C junction, which is the normal operating point in a power supply. A 1-inch-square pad on a 2-oz copper board can dissipate roughly 2-3 W before the junction hits 100 °C — that translates to about 1.6 A continuous at 780 mOhm. For higher currents, a heatsink on the tab or forced airflow is needed. ## 10 nC gate charge — light load on the driver This means the gate driver only needs to source and sink about 10 nC per switching cycle. The low Qg also keeps the Miller plateau short, reducing the switching loss during the voltage-rise and current-fall overlap. Input capacitance is 320 pF at 100 V drain-source bias. That capacitance charges and discharges through the gate resistor and driver output impedance, setting the turn-on and turn-off delay times. For a typical 10-ohm gate resistor, the RC time constant is about 3.2 ns — fast enough for switching frequencies up to several hundred kilohertz without excessive ringing, provided the PCB layout keeps the gate loop tight. The base product number is STD9N60, which covers a family of variants in different packages and tape/reel options. The M2 suffix identifies this as the MDmesh™ II Plus generation, offering improved switching performance and lower Rds(on) compared to the earlier MDmesh™ generation.","metaTitle":"STD9N60M2 MOSFET N-CH 600V 5.5A DPAK, 780 mOhm Rds(on)","metaDescription":"STD9N60M2 N-channel 600V 5.5A MOSFET in DPAK. 780 mOhm Rds(on) at 10V, 10 nC gate charge. Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"MDmesh™ II Plus","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ II Plus","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Surface Mount","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Base Product Number":"STD9N60","Operating Temperature":"150°C(TJ)","Rds On (Max) @ Id, Vgs":"780mOhm @ 3A, 10V","Power Dissipation (Max)":"60W (Tc)","Supplier Device Package":"DPAK","Gate Charge (Qg) (Max) @ Vgs":"10 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"320 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"5.5A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.4100","priceTiers":[{"qty":1,"price":"$1.41000","currency":"USD"},{"qty":10,"price":"$1.15500","currency":"USD"},{"qty":100,"price":"$0.89820","currency":"USD"},{"qty":500,"price":"$0.76136","currency":"USD"},{"qty":1000,"price":"$0.62022","currency":"USD"},{"qty":2500,"price":"$0.58386","currency":"USD"},{"qty":5000,"price":"$0.55606","currency":"USD"},{"qty":12500,"price":"$0.53039","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/b0c278c39250eb1794e7dfb0a0dbf303.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STD9N60M2/alternatives.json"},"ai":{"faq":[{"question":"What is the Rds(on) of STD9N60M2?","answer":"The maximum Rds(on) is 780 mOhm at a drain current of 3 A and a gate-source voltage of 10 V. This is the worst-case value at 25 °C junction temperature; the typical on-resistance is lower, and it increases with temperature."},{"question":"What is the closest pin-compatible alternative to STD9N60M2 in this component family?","answer":"Within the MDmesh™ II Plus family, the STD9N60M2 is the 600 V, 5.5 A, 780 mOhm variant in DPAK. Higher-current siblings in the same package and voltage class include the STD11N60M2 (11 A, 450 mOhm) and the STD7N60M2 (7 A, 1.1 ohm). All share the same DPAK footprint and gate drive requirements, so a BOM swap is possible if the current and Rds(on) budget allow."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STD9N60M2","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STD9N60M2 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}