{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STD96N3LLH6","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STD96N3LLH6","canonicalUrl":"https://icboms.com/stmicroelectronics/STD96N3LLH6","factsUrl":"https://icboms.com/api/mcp/products/STD96N3LLH6","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics DeepGATE™, STripFET™ VI series, N-Channel MOSFET, 30 V drain-source, 4.2 mOhm Rds(on) at 10 V gate drive, 80 A continuous drain, DPAK surface-mount package.","salesMarkdown":"## 30 V, 4.2 mΩ — what the headline numbers mean for your switching node The STD96N3LLH6: It is rated for a 30 V drain-source voltage and delivers a maximum Rds(on) of 4.2 mΩ at 10 V gate drive with 40 A drain current. ## Gate charge and drive voltage — the switching-speed lever The drive voltage range spans 5.5 V to 10 V for the best Rds(on); at 4.5 V the on-resistance roughly doubles from the 10 V value, so a 5 V logic supply still works but you lose some conduction efficiency. The input capacitance of 2200 pF at 25 V drain-source means the gate-drive loop needs a clean layout — a 10 Ω series resistor and a Schottky catch diode on the gate trace are cheap insurance against ringing. ## Thermal budget — 70 W dissipation in a DPAK Maximum power dissipation is 70 W at the case, but that number assumes an infinite heatsink. In a real board with 1 oz copper and no forced air, the junction-to-ambient thermal resistance of a DPAK lands around 50–60 °C/W, so the practical continuous dissipation is closer to 2–3 W before the junction hits 175 °C. The 175 °C junction rating gives margin for short overloads, but sustained high-current operation needs a copper pour on the drain tab and preferably a thermal via array to an inner plane.","metaTitle":"STD96N3LLH6 N-Channel MOSFET, 30 V, 4.2 mΩ, DPAK","metaDescription":"STD96N3LLH6 N-channel MOSFET from STMicroelectronics DeepGATE/STripFET VI series. 30 V drain-source, 4.2 mΩ Rds(on) at 10 V, 80 A continuous drain.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"DeepGATE™, STripFET™ VI","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Surface Mount","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"2.5V @ 250µA","Base Product Number":"STD96","Operating Temperature":"175°C(TJ)","Rds On (Max) @ Id, Vgs":"4.2mOhm @ 40A, 10V","Power Dissipation (Max)":"70W (Tc)","Supplier Device Package":"DPAK","Gate Charge (Qg) (Max) @ Vgs":"20 nC @ 4.5 V","Drain to Source Voltage (Vdss)":"30 V","Input Capacitance (Ciss) (Max) @ Vds":"2200 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"5.5V, 10V","Current - Continuous Drain (Id) @ 25°C":"80A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.3400","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/9f31d1d1cd934fcd05e6df09a0ef42c3.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STD96N3LLH6/alternatives.json"},"ai":{"faq":[{"question":"What is the Rds(on) of STD96N3LLH6?","answer":"At 4.5 V drive the on-resistance is higher — the datasheet typical curve shows roughly double the 10 V value."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STD96N3LLH6","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STD96N3LLH6 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}