{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STD95P3LLH6AG","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STD95P3LLH6AG","canonicalUrl":"https://icboms.com/stmicroelectronics/STD95P3LLH6AG","factsUrl":"https://icboms.com/api/mcp/products/STD95P3LLH6AG","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STD95P3LLH6AG, Automotive AEC-Q101 STripFET™ H6 P-Channel MOSFET, 30 V Vdss, 80 A Id, 6.9 mOhm Rds(on) at 10 V, DPAK (TO-252-3).","salesMarkdown":"## P-channel power switch for automotive loads The STMicroelectronics STD95P3LLH6AG is a P-channel STripFET H6 power MOSFET built for automotive-grade switching — AEC-Q101 qualified, rated for a drain-source voltage of 30 V and a continuous drain current of 80 A at 25 °C case temperature. The DPAK (TO-252-3) surface-mount package with exposed tab carries 104 W of dissipation (Tc) when properly heatsunk. The drive voltage range spans 4.5 V to 10 V for minimum and maximum Rds(on), so a 5 V logic-level gate signal works but the on-resistance roughly doubles versus the 10 V figure; the designer should verify the actual Rds(on) at the chosen gate voltage from the transfer curve. ## Temperature range and reliability context","metaTitle":"STD95P3LLH6AG P-Channel MOSFET, 30 V, 80 A, DPAK, AEC-Q101","metaDescription":"STD95P3LLH6AG: STripFET H6 P-channel MOSFET, 30 V drain-source, 80 A continuous, 6.9 mOhm Rds(on) at 10 V. AEC-Q101 qualified, DPAK package.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"Automotive, AEC-Q101, STripFET™ H6","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"P-Channel","Vgs (Max)":"±18V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Surface Mount","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"2.5V @ 250µA","Base Product Number":"STD95","Operating Temperature":"-55°C~150°C(TJ)","Rds On (Max) @ Id, Vgs":"6.9mOhm @ 40A, 10V","Power Dissipation (Max)":"104W (Tc)","Supplier Device Package":"DPAK","Gate Charge (Qg) (Max) @ Vgs":"113 nC @ 10 V","Drain to Source Voltage (Vdss)":"30 V","Input Capacitance (Ciss) (Max) @ Vds":"6250 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"4.5V, 10V","Current - Continuous Drain (Id) @ 25°C":"80A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.4800","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/101e6c2ee43882f639fa45cf86c657f2.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STD95P3LLH6AG/alternatives.json"},"ai":{"faq":[{"question":"Is STD95P3LLH6AG AEC-Q101 qualified?","answer":"Yes, the STD95P3LLH6AG is listed under the Automotive, AEC-Q101 series, meaning it has passed the automotive-grade reliability tests for MOSFETs."},{"question":"What is the maximum continuous drain current of STD95P3LLH6AG?","answer":"The continuous drain current is rated 80 A at a case temperature of 25 °C."},{"question":"What is the on-resistance of STD95P3LLH6AG at 10 V gate drive?","answer":"Maximum on-resistance is 6.9 mOhm at 40 A drain current and 10 V gate-source voltage."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STD95P3LLH6AG","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STD95P3LLH6AG when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}