{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STD95N3LLH6","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STD95N3LLH6","canonicalUrl":"https://icboms.com/stmicroelectronics/STD95N3LLH6","factsUrl":"https://icboms.com/api/mcp/products/STD95N3LLH6","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics DeepGATE™, STripFET™ VI N-Channel MOSFET, 30 V, 80 A, 4.2 mOhm at 10 V, DPAK, 70 W, ±20 Vgs.","salesMarkdown":"## 30 V, 4.2 mOhm N-channel — the low-side workhorse now obsolete The STD95N3LLH6 is an STMicroelectronics N-channel power MOSFET from the DeepGATE™ and STripFET™ VI series. The gate threshold is 2.5 V max at 250 µA, and the total gate charge is 20 nC at 4.5 V. STMicroelectronics no longer manufactures this exact order code. A cross-reference search against the 30 V, DPAK, N-channel MOSFET class is the practical next step — many parts from Infineon (OptiMOS), Nexperia, or ON Semiconductor share the same footprint and similar Rds(on) and gate-charge specs, but you will need to verify the gate-drive voltage and switching performance against your actual load conditions. ## Gate charge and drive voltage — the logic-level fit The 20 nC gate charge at 4.5 V and 2200 pF input capacitance at 25 V drain-source are the specs that tell you whether your existing gate-driver can switch this FET fast enough.","metaTitle":"STD95N3LLH6 N-Channel MOSFET, 30 V, 4.2 mOhm, DPAK","metaDescription":"STD95N3LLH6 N-Channel MOSFET from ST, 30 V, 80 A, 4.2 mOhm Rds(on) at 10 V. DeepGATE STripFET VI series.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"DeepGATE™, STripFET™ VI","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Surface Mount","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"2.5V @ 250µA","Base Product Number":"STD95","Operating Temperature":"175°C(TJ)","Rds On (Max) @ Id, Vgs":"4.2mOhm @ 40A, 10V","Power Dissipation (Max)":"70W (Tc)","Supplier Device Package":"DPAK","Gate Charge (Qg) (Max) @ Vgs":"20 nC @ 4.5 V","Drain to Source Voltage (Vdss)":"30 V","Input Capacitance (Ciss) (Max) @ Vds":"2200 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"4.5V, 10V","Current - Continuous Drain (Id) @ 25°C":"80A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.8100","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/701fa9d2fef8e4bb4f9b9391c9b7970a.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STD95N3LLH6/alternatives.json"},"ai":{"faq":[{"question":"What is the Rds(on) of STD95N3LLH6?","answer":"At 4.5 V gate drive the Rds(on) will be higher — the datasheet typical curve shows roughly double at logic-level voltages."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STD95N3LLH6","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STD95N3LLH6 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}