{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STD90N03L-1","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STD90N03L-1","canonicalUrl":"https://icboms.com/stmicroelectronics/STD90N03L-1","factsUrl":"https://icboms.com/api/mcp/products/STD90N03L-1","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STripFET™ III STD90N03L-1, N-Channel MOSFET, 30 V Vdss, 80 A Id, 5.7 mOhm Rds(on) at 10 V, 32 nC gate charge, TO-251-3 (IPak) through-hole, -55°C to 175°C junction.","salesMarkdown":"The STD90N03L-1 is marked obsolete by STMicroelectronics. For existing BOM lines, procurement must turn to the independent surplus and broker channel. The low Rds(on) keeps conduction losses down in high-current switching applications like DC-DC converters, motor drives, and load switches. Gate charge is 32 nC at 5 V, which gives a reasonable switching speed for a through-hole part in the TO-251-3 (IPak) package. Housed in a TO-251-3 (IPak) through-hole package with short leads, the STD90N03L-1 mounts into a PCB with a standard hole pattern. The IPak footprint is similar to DPAK but with through-hole leads for manual assembly or rework. Maximum power dissipation is 95 W at the case, so a thermal pad or heatsink interface is expected for continuous high-current operation. The supplier device package is I-PAK.","metaTitle":"STD90N03L-1 STMicroelectronics N-Channel MOSFET, 30 V, 80 A","metaDescription":"STD90N03L-1 STripFET™ III N-Channel MOSFET, 30 V drain-source, 80 A continuous drain, 5.7 mOhm Rds(on) at 10 V.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"STripFET™ III","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-251-3 Short Leads, IPak, TO-251AA","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"1V @ 250µA","Base Product Number":"STD90","Operating Temperature":"-55°C~175°C(TJ)","Rds On (Max) @ Id, Vgs":"5.7mOhm @ 40A, 10V","Power Dissipation (Max)":"95W (Tc)","Supplier Device Package":"I-PAK","Gate Charge (Qg) (Max) @ Vgs":"32 nC @ 5 V","Drain to Source Voltage (Vdss)":"30 V","Input Capacitance (Ciss) (Max) @ Vds":"2805 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"5V, 10V","Current - Continuous Drain (Id) @ 25°C":"80A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":null,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/9188929d4193ea205cf8c30ab911a76b.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STD90N03L-1/alternatives.json"},"ai":{"faq":[{"question":"What is the replacement for STD90N03L-1?","answer":"The evidence does not list an official replacement or successor for the STD90N03L-1. For a form-fit-function substitute, review STMicroelectronics' current N-channel 30 V MOSFET portfolio in the IPak package, or contact us with your application requirements for a cross-reference recommendation."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STD90N03L-1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STD90N03L-1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}