{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STD8NM60N-1","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STD8NM60N-1","canonicalUrl":"https://icboms.com/stmicroelectronics/STD8NM60N-1","factsUrl":"https://icboms.com/api/mcp/products/STD8NM60N-1","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics MDmesh™ II N-channel MOSFET, 600V Vdss, 7A continuous drain, 650mΩ Rds(on) at 10V, 19nC gate charge, through-hole I-Pak (TO-251) package, -55 to 150°C junction temperature.","salesMarkdown":"## 600V, 7A N-channel MOSFET in I-Pak — MDmesh™ II series The STD8NM60N-1: The 650mΩ maximum Rds(on) at 10V gate drive and 19nC typical gate charge suit flyback, PFC boost, and two-switch forward topologies. The 650mΩ Rds(on) at 10V Vgs and 3.5A Id is the figure to use for conduction loss calculations at full load. At 7A the dissipation in the channel alone reaches roughly 32W, which is within the 70W package limit but requires a well-designed heatsink. The 19nC gate charge at 10V is moderate — a typical gate driver with 1A peak source/sink capability will switch the device in tens of nanoseconds, keeping crossover losses manageable in hard-switched topologies. The 560pF input capacitance at 50V Vds confirms the drive requirement is modest, so a standard bootstrap or isolated gate-drive transformer can handle it. ## Through-hole I-Pak — board-level mounting and thermal path The TO-251 (I-Pak) package is a through-hole variant with three short leads and a metal tab that is soldered to the PCB for heatsinking. Unlike the surface-mount DPAK, the I-Pak's leads go through plated holes, giving a stronger mechanical bond for high-vibration environments. For the 70W maximum dissipation, a dedicated heatsink or a large copper pour on the board is necessary — the package alone cannot shed that power without a thermal interface. ## Obsolete — sourcing and replacement strategy This means STMicroelectronics has discontinued the part and no longer accepts production orders. The MDmesh™ II series has been superseded by newer generations like MDmesh™ V and MDmesh™ K5, which offer lower Rds(on) and faster switching in the same voltage class. A direct pin-compatible drop-in is not guaranteed — the replacement candidate must be evaluated for gate drive voltage, package footprint, and thermal performance. The base product number STD8N indicates the 8A current class, so a search for STD8N series devices in the same I-Pak package is a starting point.","metaTitle":"STD8NM60N-1 N-Channel MOSFET, 600V, 7A, MDmesh™ II, I-Pak","metaDescription":"STMicroelectronics STD8NM60N-1 N-channel 600V 7A MOSFET in TO-251 I-Pak. 650mΩ Rds(on), 19nC gate charge, -55 to 150°C. RFQ for price and availability.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ II","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-251-3 Short Leads, IPak, TO-251AA","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Base Product Number":"STD8N","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"650mOhm @ 3.5A, 10V","Power Dissipation (Max)":"70W (Tc)","Supplier Device Package":"I-PAK","Gate Charge (Qg) (Max) @ Vgs":"19 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"560 pF @ 50 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"7A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.7700","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/3d41f84da2ff3b1f7385d5634bcc8194.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STD8NM60N-1/alternatives.json"},"ai":{"faq":[{"question":"What is the replacement for STD8NM60N-1?","answer":"STMicroelectronics has not published a formal direct successor for the STD8NM60N-1. The MDmesh™ II series has been replaced by later generations (MDmesh™ V, K5) that offer lower Rds(on) and improved switching performance at the same 600V rating. A candidate like the STD8NM60N-1's base product number family (STD8N) in a newer series, in the same I-Pak package, would be the logical starting point for evaluation. Pin compatibility and gate drive requirements must be verified against the original design."},{"question":"What package does STD8NM60N-1 come in?","answer":"The STD8NM60N-1 is supplied in a through-hole TO-251 package, also known as I-Pak (IPak). It has three short leads and a metal drain tab for heatsinking. The supplier device package is I-PAK, and the package/case is TO-251-3 Short Leads, IPak, TO-251AA."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STD8NM60N-1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STD8NM60N-1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}