{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STD80N6F6","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STD80N6F6","canonicalUrl":"https://icboms.com/stmicroelectronics/STD80N6F6","factsUrl":"https://icboms.com/api/mcp/products/STD80N6F6","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics DeepGATE™, STripFET™ VI N-Channel MOSFET, 60 V drain-source, 80 A continuous drain, 6.5 mOhm Rds(on) at 40 A / 10 V, ±20 V gate-source, 122 nC gate charge, 120 W power dissipation, DPAK (TO-252) surface mount, -55 to 175 °C junction, AEC-Q101 qualified.","salesMarkdown":"## 60 V, 80 A N-channel in DPAK — what this part is The STMicroelectronics STD80N6F6 is an N-channel power MOSFET built on the DeepGATE™ and STripFET™ VI technology platform. Gate charge totals 122 nC at 10 V, a figure that directly affects the gate-drive power budget and switching speed. ## AEC-Q101 and the temperature range AEC-Q101 qualification adds the stress tests — HTRB, H3TRB, temperature cycling, and autoclave — that a standard commercial MOSFET does not see. For a design targeting 150 °C ambient or a high-vibration environment, this grade gives the reliability margin a commercial part lacks. The STD80N6F6 is listed as obsolete.","metaTitle":"STD80N6F6 N-Channel MOSFET, 60V 80A DPAK, Automotive Grade","metaDescription":"STD80N6F6 N-Channel MOSFET from STMicroelectronics, 60V drain-source, 80A continuous drain, 6.5 mOhm Rds(on) at 10V. AEC-Q101 qualified.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Grade":"Automotive","Series":"DeepGATE™, STripFET™ VI","Package":"Tape & Reel (TR) Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Surface Mount","Qualification":"AEC-Q101","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4.5V @ 250µA","Base Product Number":"STD80","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"6.5mOhm @ 40A, 10V","Power Dissipation (Max)":"120W (Tc)","Supplier Device Package":"DPAK","Gate Charge (Qg) (Max) @ Vgs":"122 nC @ 10 V","Drain to Source Voltage (Vdss)":"60 V","Input Capacitance (Ciss) (Max) @ Vds":"7480 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"80A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.6135","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/a3fd6fc6145fa856ebeeadd3540bc4cf.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STD80N6F6/alternatives.json"},"ai":{"faq":[{"question":"Where can I buy STD80N6F6?","answer":"The STD80N6F6 is obsolete and no longer in production. Submit a request for quote to confirm current availability and pricing."},{"question":"Is STD80N6F6 obsolete?","answer":"Yes, the STD80N6F6 is listed as obsolete. STMicroelectronics has discontinued production, and no official replacement part number has been published."},{"question":"Is STD80N6F6 AEC-Q101 qualified?","answer":"Yes, the STD80N6F6 carries AEC-Q101 qualification, confirming it meets automotive-grade reliability requirements."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STD80N6F6","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STD80N6F6 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}