{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STD80N4F6","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STD80N4F6","canonicalUrl":"https://icboms.com/stmicroelectronics/STD80N4F6","factsUrl":"https://icboms.com/api/mcp/products/STD80N4F6","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics Automotive, AEC-Q101, DeepGATE™, STripFET™ VI N-Channel MOSFET, 40 V Vdss, 80 A Id, DPAK package, Tape & Reel.","salesMarkdown":"## 40 V, 80 A N-channel in DPAK — what the ratings mean for your load The STD80N4F6 is an N-channel power MOSFET from STMicroelectronics, built on the DeepGATE™ and STripFET™ VI process. The 6 mOhm maximum on-resistance at 40 A and 10 V gate drive means conduction losses stay under 10 W at full rated current — the 70 W package dissipation limit leaves thermal headroom for switching losses in a motor-drive or DC-DC converter application. ## Gate charge and input capacitance — sizing the gate driver Total gate charge is 36 nC at 10 V Vgs. Input capacitance Ciss is 2150 pF at 25 V Vds. This sets the drive impedance needed to stay within the rise-time budget — a 10-Ohm gate resistor gives roughly a 22 ns RC time constant, which is fast enough for most hard-switched topologies without excessive ringing. With a 10 V drive (the recommended Vgs for minimum Rds(on)), the gate overdrive is 6 V — well above the threshold, ensuring full enhancement across the operating temperature range. ## Package and board-fit — DPAK footprint The STD80N4F6 is supplied in a TO-252-3 DPAK package, surface-mount with two leads and a tab. Available in Tape & Reel (TR) and Cut Tape (CT) formats. The DPAK footprint is standard and mates with the same land pattern as other TO-252 devices in the STripFET family. The base product number is STD80, which covers the 40 V N-channel family in DPAK. The full order code STD80N4F6 distinguishes the 40 V, 80 A variant with the 6 mOhm Rds(on) grade.","metaTitle":"STD80N4F6 MOSFET, N-Ch 40V 80A DPAK, AEC-Q101","metaDescription":"STMicroelectronics STD80N4F6 N-channel MOSFET, 40V Vdss, 80A Id, 6mOhm Rds(on), DPAK package. AEC-Q101 qualified. Active production. Sourced to order.","metaKeywords":null},"attributes":{"series":"Automotive, AEC-Q101, DeepGATE™, STripFET™ VI","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"Automotive, AEC-Q101, DeepGATE™, STripFET™ VI","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Surface Mount","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Base Product Number":"STD80","Operating Temperature":"-55°C~175°C(TJ)","Rds On (Max) @ Id, Vgs":"6mOhm @ 40A, 10V","Power Dissipation (Max)":"70W (Tc)","Supplier Device Package":"DPAK","Gate Charge (Qg) (Max) @ Vgs":"36 nC @ 10 V","Drain to Source Voltage (Vdss)":"40 V","Input Capacitance (Ciss) (Max) @ Vds":"2150 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"80A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.6100","priceTiers":[{"qty":1,"price":"$1.69000","currency":"USD"},{"qty":10,"price":"$1.52200","currency":"USD"},{"qty":100,"price":"$1.22330","currency":"USD"},{"qty":500,"price":"$1.00504","currency":"USD"},{"qty":1000,"price":"$0.94815","currency":"USD"},{"qty":2500,"price":"$0.94815","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/bcb0d240ba57cc65b27aa1ab279a4add.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STD80N4F6/alternatives.json"},"ai":{"faq":[{"question":"Will STD80N4F6 drop into a board designed for STD80N3LL?","answer":"Both parts share the same DPAK footprint and are N-channel MOSFETs in the STD80 base family. The key difference is the voltage rating — STD80N4F6 is 40 V, while STD80N3LL is 30 V. If the board's maximum drain voltage stays below 30 V, the STD80N4F6 is a functional drop-in with a slightly higher Rds(on) (6 mOhm vs 5.2 mOhm). The gate drive requirements are the same at 10 V."},{"question":"What compliance documentation does STMicroelectronics provide for STD80N4F6?","answer":"The part is ROHS3 compliant. As an AEC-Q101 qualified device, STMicroelectronics provides a PPAP (Production Part Approval Process) package and a PCN (Product Change Notification) history. Full material declaration and REACH compliance data are available through the standard ST documentation portal."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STD80N4F6","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STD80N4F6 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}