{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STD80N240K6","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STD80N240K6","canonicalUrl":"https://icboms.com/stmicroelectronics/STD80N240K6","factsUrl":"https://icboms.com/api/mcp/products/STD80N240K6","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STD80N240K6 N-Channel MOSFET, 800 V drain-to-source voltage, 16 A continuous drain current, 220 mOhm Rds(on) at 10 V gate drive, 105 W power dissipation, D-PAK (TO-252) surface-mount package, -55°C to 150°C junction temperature.","salesMarkdown":"## Gate charge and switching — what 25.9 nC means for the drive circuit The input capacitance is 1350 pF at 400 V drain bias. Maximum power dissipation is 105 W at the case, but that figure assumes an ideal heatsink — real-world derating depends on PCB copper area and airflow. The D-PAK package's exposed tab on the drain helps pull heat into the board's ground plane. It is ROHS3 compliant. For a BOM freeze, this part carries no LTB risk today.","metaTitle":"STD80N240K6 N-Channel MOSFET, 800V, 16A, D-PAK (TO-252)","metaDescription":"STMicroelectronics STD80N240K6 N-Channel MOSFET, 800V Vdss, 16A Id, 220mOhm Rds(on) at 10V. Active, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"-","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±30V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Surface Mount","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 100µA","Base Product Number":"STD80","Operating Temperature":"-55°C~150°C(TJ)","Rds On (Max) @ Id, Vgs":"220mOhm @ 7A, 10V","Power Dissipation (Max)":"105W (Tc)","Supplier Device Package":"D-PAK (TO-252)","Gate Charge (Qg) (Max) @ Vgs":"25.9 nC @ 10 V","Drain to Source Voltage (Vdss)":"800 V","Input Capacitance (Ciss) (Max) @ Vds":"1350 pF @ 400 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"16A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$5.6200","priceTiers":[{"qty":1,"price":"$5.62000","currency":"USD"},{"qty":10,"price":"$5.04600","currency":"USD"},{"qty":100,"price":"$4.13400","currency":"USD"},{"qty":500,"price":"$3.51920","currency":"USD"},{"qty":1000,"price":"$3.50000","currency":"USD"},{"qty":2500,"price":"$3.50000","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/5f0c79fb93c41730ab39cdbf2f91af1c.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STD80N240K6/alternatives.json"},"ai":{"faq":[{"question":"Can I replace IRF640 with STD80N240K6?","answer":"The IRF640 is a 200 V N-channel MOSFET in TO-220, while the STD80N240K6 is an 800 V device in D-PAK. The voltage rating and package differ significantly — they are not direct replacements. Check the circuit's voltage and thermal requirements before substituting."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STD80N240K6","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STD80N240K6 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}