{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STD80N10F7","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STD80N10F7","canonicalUrl":"https://icboms.com/stmicroelectronics/STD80N10F7","factsUrl":"https://icboms.com/api/mcp/products/STD80N10F7","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics DeepGATE™, STripFET™ VII N-Channel MOSFET, STD80N10F7, 100V Vdss, 70A Id, 10mOhm Rds(on) @ 40A/10V, 45nC gate charge, DPAK (TO-252), -55 to 175°C.","salesMarkdown":"At 40 A the 10 mOhm figure yields conduction loss that drives the thermal design. For a 100 V rail, the 70 A continuous rating is derated by the junction temperature; at 175 °C the current capability drops, but the 175 °C Tj max itself is the spec that keeps this part in the race for high-temperature environments. No NRND or last-time-buy notice is in effect. ROHS3 compliant. The base product number is STD80; the F7 suffix denotes the STripFET VII generation.","metaTitle":"STD80N10F7 MOSFET N-Ch 100V 70A DPAK, 10mOhm, 45nC","metaDescription":"STD80N10F7 N-channel 100V 70A MOSFET in DPAK (TO-252). 10mOhm Rds(on) at 40A/10V, 45nC gate charge, -55 to 175°C. Active production, ROHS3.","metaKeywords":null},"attributes":{"series":"DeepGATE™, STripFET™ VII","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"DeepGATE™, STripFET™ VII","Package":"Tape & Reel (TR) Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Surface Mount","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4.5V @ 250µA","Base Product Number":"STD80","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"10mOhm @ 40A, 10V","Power Dissipation (Max)":"85W (Tc)","Supplier Device Package":"DPAK","Gate Charge (Qg) (Max) @ Vgs":"45 nC @ 10 V","Drain to Source Voltage (Vdss)":"100 V","Input Capacitance (Ciss) (Max) @ Vds":"3100 pF @ 50 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"70A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.0800","priceTiers":[{"qty":1,"price":"$2.25000","currency":"USD"},{"qty":10,"price":"$2.02300","currency":"USD"},{"qty":100,"price":"$1.62610","currency":"USD"},{"qty":500,"price":"$1.33598","currency":"USD"},{"qty":1000,"price":"$1.26035","currency":"USD"},{"qty":2500,"price":"$1.26035","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/b706bd6da0ab25542a12bcabbe8853d0.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STD80N10F7/alternatives.json"},"ai":{"faq":[{"question":"What is the STD80N10F7 Rds(on) and gate charge?","answer":"The maximum on-resistance is 10 mOhm at 40 A drain current with a 10 V gate drive. The typical gate charge at 10 V is 45 nC."},{"question":"Can I replace STD80N10 with STD80N10F7?","answer":"The STD80N10F7 is the STripFET VII generation replacement for the earlier STD80N10. Both are 100 V, 70 A N-channel MOSFETs in DPAK. Verify the gate threshold voltage and gate charge differences against your gate-drive circuit before substituting."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STD80N10F7","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STD80N10F7 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}