{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STD7NM64N","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STD7NM64N","canonicalUrl":"https://icboms.com/stmicroelectronics/STD7NM64N","factsUrl":"https://icboms.com/api/mcp/products/STD7NM64N","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics MDmesh™ II series, N-Channel MOSFET, STD7NM64N, 640 V drain-source, 5 A continuous drain, 1.05 Ohm Rds(on) at 2.5 A, 10 V, DPAK surface-mount package.","salesMarkdown":"The 640 V Vdss gives solid headroom for 240 V AC or 400 V DC rails, even with switching transients. The 1.05 Ohm Rds(on) at 10 V gate drive is the figure to use for conduction loss calculations — at 5 A that's about 26 W, which the 60 W package rating can handle with a good thermal pad and airflow. ## Lifecycle status — obsolete, but available For new designs, look at ST's current MDmesh series in the same voltage and current class.","metaTitle":"STD7NM64N N-Channel MOSFET, 640 V, 5 A, DPAK","metaDescription":"STD7NM64N N-Channel MOSFET from STMicroelectronics MDmesh™ II series. 640 V drain-source, 5 A continuous drain, 1.05 Ohm Rds(on). DPAK surface-mount package.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ II","Package":"Tape & Reel (TR) Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Surface Mount","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Base Product Number":"STD7","Operating Temperature":"150°C (TJ)","Rds On (Max) @ Id, Vgs":"1.05Ohm @ 2.5A, 10V","Power Dissipation (Max)":"60W (Tc)","Supplier Device Package":"DPAK","Gate Charge (Qg) (Max) @ Vgs":"14 nC @ 10 V","Drain to Source Voltage (Vdss)":"640 V","Input Capacitance (Ciss) (Max) @ Vds":"363 pF @ 50 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"5A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.0900","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/6708dc04e93f927a99a92ddd0f90e25a.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STD7NM64N/alternatives.json"},"ai":{"faq":[{"question":"What is a suitable replacement for STD7NM64N?","answer":"No official replacement is listed in the record. For new designs, evaluate ST's current MDmesh series MOSFETs with a 640 V or higher drain-source rating and 5 A or higher continuous drain current in a DPAK package."},{"question":"What is the Rds(on) and Vgs threshold of STD7NM64N?","answer":"Maximum on-resistance is 1.05 Ohm at 2.5 A drain current and 10 V gate drive. The maximum gate threshold voltage is 4 V at 250 µA drain current."},{"question":"Is STD7NM64N a direct replacement for STP7NM60N?","answer":"The STD7NM64N has a 640 V drain-source rating versus 600 V for the STP7NM60N, and comes in a DPAK surface-mount package versus the TO-220 through-hole of the STP7NM60N. They are not pin-compatible — the package difference means a different PCB footprint."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STD7NM64N","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STD7NM64N when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-16T14:59:23.765Z","lastPublished":"2026-07-16T14:59:23.765Z","indexable":true}}