{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STD7NK40ZT4","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STD7NK40ZT4","canonicalUrl":"https://icboms.com/stmicroelectronics/STD7NK40ZT4","factsUrl":"https://icboms.com/api/mcp/products/STD7NK40ZT4","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STD7NK40ZT4 SuperMESH™ N-channel MOSFET, 400 V, 5.4 A, DPAK (TO-252), 1 Ω Rds(on) at 10 V, 26 nC gate charge, Tape & Reel.","salesMarkdown":"## 400 V N-channel switch in DPAK The STD7NK40ZT4 is an N-channel enhancement-mode MOSFET from ST's SuperMESH™ series, housed in a DPAK (TO-252) surface-mount package. It is specified for 400 V drain-source breakdown and 5.4 A continuous drain current at 25 °C case temperature. With a maximum Rds(on) of 1 Ω at Vgs = 10 V and Id = 2.7 A, the on-resistance at the operating junction temperature will be higher — the 25 °C figure is the starting point for loss budgeting, not the in-circuit value. ## Gate drive and switching loss budget Total gate charge is 26 nC at Vgs = 10 V — the drive current required to switch at a given frequency is Qg × fsw. A 100 kHz switching rate draws 2.6 mA from the gate driver, well within the capability of a standard MOSFET driver IC. Input capacitance Ciss is 535 pF at Vds = 25 V, which sets the Miller plateau duration during switching transitions. The 10 V drive voltage is the recommended gate bias for minimum on-resistance; the threshold is 4.5 V max at 50 µA drain current, so a 5 V logic-level gate signal may not fully enhance the channel. Maximum gate-source voltage is ±30 V — a standard 12 V or 15 V gate drive is safe, but a series resistor is advisable if the driver supply can overshoot beyond the abs-max rating during fast turn-off. ## Thermal envelope and package integration The DPAK (TO-252) footprint with the exposed drain tab requires a copper pad on the PCB for heat sinking. The maximum power dissipation is 70 W at case temperature — the actual continuous dissipation is derated by the junction-to-ambient thermal resistance of the board layout, typically 50–80 °C/W on a 1 oz copper pour. Operating junction temperature range is -55 °C to +150 °C, which covers industrial and automotive under-hood environments. The 150 °C ceiling is the absolute limit; reliability degrades above 125 °C continuous, so a 20 % derating on power dissipation is standard practice for a 125 °C max junction design. ## Active lifecycle and sourcing posture The part is available through independent distribution channels. Sourcing is quoted to order against the BOM line — availability and current pricing are confirmed at RFQ time, with no stock-holding claim on this listing.","metaTitle":"STD7NK40ZT4 N-Ch 400V 5.4A DPAK MOSFET","metaDescription":"STD7NK40ZT4 N-channel 400V 5.4A SuperMESH MOSFET in DPAK. 1Ω Rds(on) at 10V, 26nC gate charge. Active production, ROHS3. Sourced to order.","metaKeywords":null},"attributes":{"series":"SuperMESH™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"SuperMESH™","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±30V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Surface Mount","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4.5V @ 50µA","Base Product Number":"STD7NK40","Operating Temperature":"-55°C~150°C(TJ)","Rds On (Max) @ Id, Vgs":"1Ohm @ 2.7A, 10V","Power Dissipation (Max)":"70W (Tc)","Supplier Device Package":"DPAK","Gate Charge (Qg) (Max) @ Vgs":"26 nC @ 10 V","Drain to Source Voltage (Vdss)":"400 V","Input Capacitance (Ciss) (Max) @ Vds":"535 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"5.4A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.6200","priceTiers":[{"qty":1,"price":"$1.62000","currency":"USD"},{"qty":10,"price":"$1.32200","currency":"USD"},{"qty":100,"price":"$1.02850","currency":"USD"},{"qty":500,"price":"$0.87176","currency":"USD"},{"qty":1000,"price":"$0.71014","currency":"USD"},{"qty":2500,"price":"$0.66851","currency":"USD"},{"qty":5000,"price":"$0.63667","currency":"USD"},{"qty":12500,"price":"$0.60729","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/57c81f9d12edc7738ff91816c8486b2a.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STD7NK40ZT4/alternatives.json"},"ai":{"faq":[{"question":"What is the Rds(on) of the STD7NK40ZT4 at the operating junction temperature?","answer":"The datasheet specifies a maximum Rds(on) of 1 Ω at 25 °C junction with Vgs = 10 V and Id = 2.7 A. At a 125 °C junction, the on-resistance typically increases by a factor of 1.6–1.8× — budget approximately 1.6–1.8 Ω for loss calculations at elevated temperature."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STD7NK40ZT4","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STD7NK40ZT4 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}