{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STD7N65M2","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STD7N65M2","canonicalUrl":"https://icboms.com/stmicroelectronics/STD7N65M2","factsUrl":"https://icboms.com/api/mcp/products/STD7N65M2","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STD7N65M2, N-channel 650 V MOSFET, MDmesh M2 series, 5 A continuous drain, 1.15 Ohm Rds(on) at 10 V, 9 nC gate charge, DPAK (TO-252) surface-mount package, -55 to 150 °C junction temperature.","salesMarkdown":"## 650 V N-channel MOSFET in DPAK — what this part is It is built on ST's MDmesh vertical structure, which delivers a good balance of low on-resistance and fast switching for high-voltage applications. The 650 V Vdss rating places this part in the standard high-voltage MOSFET class for offline AC-DC converters operating from rectified 230 VAC or universal mains. Input capacitance of 270 pF at 100 V drain-source is modest, keeping the switching node capacitance low for resonant or quasi-resonant topologies. ## Package and mounting — DPAK (TO-252-3) The STD7N65M2 is supplied in the DPAK (TO-252-3) surface-mount package, with two leads plus a drain tab. For the full 60 W power dissipation rating, the tab must be soldered to a sufficient copper pad area on the board, typically 1 to 2 square inches of 2 oz copper, with thermal vias to inner layers. It is RoHS compliant per the standard STMicroelectronics declaration.","metaTitle":"STD7N65M2 N-Channel MOSFET, 650 V, 5 A, DPAK","metaDescription":"STD7N65M2 N-channel 650 V MOSFET, 5 A continuous drain, 1.15 Ohm Rds(on) at 10 V. MDmesh M2 series in DPAK package. Active product, available to order.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™","Package":"Tape & Reel (TR) Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Surface Mount","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Base Product Number":"STD7N65","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"1.15Ohm @ 2.5A, 10V","Power Dissipation (Max)":"60W (Tc)","Supplier Device Package":"DPAK","Gate Charge (Qg) (Max) @ Vgs":"9 nC @ 10 V","Drain to Source Voltage (Vdss)":"650 V","Input Capacitance (Ciss) (Max) @ Vds":"270 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"5A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.6500","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/3ce30b4a65a0ce06cd800c1e70f3263f.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STD7N65M2/alternatives.json"},"ai":{"faq":[{"question":"Is STD7N65M2 RoHS compliant?","answer":"Yes, the STD7N65M2 is RoHS compliant per STMicroelectronics standard declarations."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STD7N65M2","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STD7N65M2 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}