{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STD7N52K3","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STD7N52K3","canonicalUrl":"https://icboms.com/stmicroelectronics/STD7N52K3","factsUrl":"https://icboms.com/api/mcp/products/STD7N52K3","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics SuperMESH3™ N-Channel MOSFET, STD7N52K3, 525 Vdss, 6 A continuous drain (Tc), 980 mOhm Rds(on) at 10 V, DPAK (TO-252) surface-mount package.","salesMarkdown":"## Active high-voltage N-channel MOSFET in DPAK It is built on a strip-layout vertical DMOS process that delivers low on-resistance and fast switching for offline power supplies, LED lighting drivers, and auxiliary converters in industrial and consumer equipment. The 10 V drive voltage is typical for standard gate-drive ICs in offline converters; the threshold voltage maxes at 4.5 V at 50 µA, so a logic-level gate signal (5 V) will not fully enhance the channel — plan for a 10 V bias rail or a bootstrap supply. These numbers indicate moderate switching losses for a 525 V device — suitable for hard-switched topologies up to 100 kHz or so, but not optimised for the lowest gate-drive power in very high frequency designs. The 34 nC Qg means a typical gate-driver with 1 A peak current can charge the gate in about 34 ns, though practical turn-on/off times depend on the external gate resistor and the Miller plateau. The STD7N52K3 is supplied in the TO-252-3 (DPAK) surface-mount package, a common footprint for medium-power MOSFETs. Maximum power dissipation is 90 W at case temperature, but the real limit is set by the junction temperature ceiling of 150°C. No official second-source cross-reference is listed, but the base part STD7N52 covers the same die in other package variants if a different footprint is acceptable.","metaTitle":"STD7N52K3 N-Channel MOSFET, 525 V, 6 A, DPAK","metaDescription":"STD7N52K3 N-Channel MOSFET from STMicroelectronics SuperMESH3 series. 525 Vdss, 6 A continuous drain, 980 mOhm Rds(on) at 10 V. DPAK surface-mount package.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"SuperMESH3™","Package":"Tape & Reel (TR) Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±30V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Surface Mount","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4.5V @ 50µA","Base Product Number":"STD7N52","Operating Temperature":"150°C (TJ)","Rds On (Max) @ Id, Vgs":"980mOhm @ 3.1A, 10V","Power Dissipation (Max)":"90W (Tc)","Supplier Device Package":"DPAK","Gate Charge (Qg) (Max) @ Vgs":"34 nC @ 10 V","Drain to Source Voltage (Vdss)":"525 V","Input Capacitance (Ciss) (Max) @ Vds":"737 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"6A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.6623","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/7e6032c8d40fcc1cdcf27c9843287971.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STD7N52K3/alternatives.json"},"ai":{"faq":[{"question":"What is the Vgs threshold of STD7N52K3?","answer":"The maximum gate threshold voltage is 4.5 V at 50 µA drain current."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STD7N52K3","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STD7N52K3 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}