{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STD7N52DK3","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STD7N52DK3","canonicalUrl":"https://icboms.com/stmicroelectronics/STD7N52DK3","factsUrl":"https://icboms.com/api/mcp/products/STD7N52DK3","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STD7N52DK3, SuperFREDmesh3™ N-Channel MOSFET, 525V Vdss, 6A Id, 1.15Ω Rds(on) @ 10V, DPAK (TO-252) surface-mount package, 90W power dissipation.","salesMarkdown":"## 525 V / 6 A N-Channel MOSFET in DPAK ## SuperFREDmesh3 — fast-recovery body diode The SuperFREDmesh3™ series integrates a fast-recovery body diode, which reduces reverse-recovery charge and switching losses in bridge topologies like half-bridge and full-bridge converters. This makes the STD7N52DK3 better suited for hard-switched offline power supplies and PFC stages than a standard MOSFET with a slow body diode. ## Key ratings for the design-in decision The 525 V Vdss rating provides adequate margin for universal-input offline converters (up to 400 VDC bus) and for 240 VAC applications with derating. The 6 A continuous current is a package-limited figure — the actual safe operating area depends on heatsinking and ambient temperature. The maximum junction temperature is 150°C, typical for silicon MOSFETs in this class.","metaTitle":"STD7N52DK3 N-Channel MOSFET, 525V 6A DPAK","metaDescription":"STD7N52DK3 N-Channel MOSFET from STMicroelectronics, 525V Vdss, 6A continuous drain, 1.15Ω Rds(on) at 10V. DPAK surface-mount package.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"SuperFREDmesh3™","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±30V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Surface Mount","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4.5V @ 50µA","Base Product Number":"STD7","Operating Temperature":"150°C(TJ)","Rds On (Max) @ Id, Vgs":"1.15Ohm @ 3A, 10V","Power Dissipation (Max)":"90W (Tc)","Supplier Device Package":"DPAK","Gate Charge (Qg) (Max) @ Vgs":"33 nC @ 10 V","Drain to Source Voltage (Vdss)":"525 V","Input Capacitance (Ciss) (Max) @ Vds":"870 pF @ 50 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"6A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":null,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/26fe907588e4228558e8718b6d8e3292.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STD7N52DK3/alternatives.json"},"ai":{"faq":[{"question":"What is the Rds(on) of STD7N52DK3?","answer":"The maximum Rds(on) is 1.15 Ω at a gate-to-source voltage of 10 V and a drain current of 3 A. This is the on-resistance under the recommended drive condition."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STD7N52DK3","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STD7N52DK3 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}