{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STD70N03L-1","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STD70N03L-1","canonicalUrl":"https://icboms.com/stmicroelectronics/STD70N03L-1","factsUrl":"https://icboms.com/api/mcp/products/STD70N03L-1","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STD70N03L-1 N-Channel MOSFET, STripFET™ III, 30V Vdss, 70A Id, 7.3mOhm Rds(on), TO-251-3 (I-PAK), Through Hole, Tube.","salesMarkdown":"The STD70N03L-1: The gate threshold voltage is 1 V max at 250 µA, and the device is driven with 5 V or 10 V logic — the 5 V drive is sufficient to achieve the rated Rds(on) minimum. ## Switching performance and gate drive Total gate charge (Qg) is 21 nC at 5 V gate drive — this low charge enables fast switching in DC-DC converters and load switches, keeping gate-drive losses minimal at moderate frequencies. Input capacitance (Ciss) is 2200 pF at 25 V drain bias — the switching speed is limited by the gate-drive current available to charge this capacitance, so a driver capable of sourcing at least 1 A is recommended for sub-100 ns rise times. Sourced through independent distribution channels against an RFQ.","metaTitle":"STD70N03L-1 ST N-Channel MOSFET, 30V 70A, TO-251","metaDescription":"STD70N03L-1 N-channel MOSFET, 30V Vdss, 70A Id, 7.3mOhm Rds(on). Obsolete — sourced to order against RFQ through independent distribution.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"STripFET™ III","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-251-3 Short Leads, IPak, TO-251AA","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"1V @ 250µA","Base Product Number":"STD70N","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"7.3mOhm @ 35A, 10V","Power Dissipation (Max)":"70W (Tc)","Supplier Device Package":"I-PAK","Gate Charge (Qg) (Max) @ Vgs":"21 nC @ 5 V","Drain to Source Voltage (Vdss)":"30 V","Input Capacitance (Ciss) (Max) @ Vds":"2200 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"5V, 10V","Current - Continuous Drain (Id) @ 25°C":"70A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":null,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/a1107e25fd2aae48639661a8ace292e2.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STD70N03L-1/alternatives.json"},"ai":{"faq":[{"question":"What is the Rds(on) of STD70N03L-1 at 10 V gate drive?","answer":"Maximum Rds(on) is 7.3 mOhm at 35 A drain current and 10 V gate drive. The drive voltage range is 5 V to 10 V; the 5 V drive achieves the minimum Rds(on) value."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STD70N03L-1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STD70N03L-1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-21T04:59:01.945Z","lastPublished":"2026-07-21T04:59:01.945Z","indexable":true}}