{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STD6NM60N-1","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STD6NM60N-1","canonicalUrl":"https://icboms.com/stmicroelectronics/STD6NM60N-1","factsUrl":"https://icboms.com/api/mcp/products/STD6NM60N-1","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STD6NM60N-1, N-Channel MOSFET, MDmesh™ II, 600 V, 4.6 A, 920 mOhm Rds(on) @ 10 V, 13 nC gate charge, TO-251 (IPAK) through-hole package, -55°C to 150°C.","salesMarkdown":"The 13 nC gate charge keeps switching losses manageable in flyback or PFC stages running at 100 kHz or so. ## Obsolete — planning the BOM transition The STD6NM60N-1 is marked obsolete by STMicroelectronics. New designs should avoid this part and select an active alternative. ## Through-hole TO-251 (IPAK) — mounting and thermal note The TO-251 (IPAK) package is a through-hole, short-lead variant of the DPAK, intended for vertical mounting on a PCB with the tab soldered to a copper pad for heat spreading. The 45 W dissipation rating assumes the tab is soldered to a sufficient copper area — without that thermal path, junction temperature rises quickly above 4 A continuous. The three short leads suit wave-solder assembly but limit rework access compared to a TO-220.","metaTitle":"STD6NM60N-1 N-Channel MOSFET, 600V, 4.6A, MDmesh II","metaDescription":"STD6NM60N-1 N-Channel MOSFET, 600V, 4.6A, 920mOhm Rds(on), 13nC gate charge, TO-251 (IPAK). Obsolete.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ II","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-251-3 Short Leads, IPak, TO-251AA","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Base Product Number":"STD6N","Operating Temperature":"-55°C~150°C(TJ)","Rds On (Max) @ Id, Vgs":"920mOhm @ 2.3A, 10V","Power Dissipation (Max)":"45W (Tc)","Supplier Device Package":"TO-251 (IPAK)","Gate Charge (Qg) (Max) @ Vgs":"13 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"420 pF @ 50 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"4.6A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":null,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/2ba55c1d8836ab10e22ffb3d8f49860d.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STD6NM60N-1/alternatives.json"},"ai":{"faq":[{"question":"What is the replacement for STD6NM60N-1?","answer":"A cross-reference search for a 600 V, 4.6 A N-channel MOSFET in a TO-251 (IPAK) package is needed. Candidates from ST's own MDmesh series or competitors' equivalent families should be evaluated for Rds(on), gate charge, and thermal performance."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STD6NM60N-1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STD6NM60N-1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}