{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STD6N65M2","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STD6N65M2","canonicalUrl":"https://icboms.com/stmicroelectronics/STD6N65M2","factsUrl":"https://icboms.com/api/mcp/products/STD6N65M2","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics MDmesh™ N-Channel MOSFET, STD6N65M2, 650 V Vdss, 4 A Id, 1.35 Ohm Rds(on) at 2 A, 10 V, 9.8 nC gate charge, DPAK (TO-252), -55 to 150 °C.","salesMarkdown":"## 650 V MDmesh N-channel — primary-side switch for offline supplies ## 1.35 Ohm Rds(on) — conduction loss floor at 2 A Rds(on) is specified at 1.35 Ohm maximum with Vgs = 10 V and Id = 2 A. That is the figure to use for the worst-case conduction loss calculation at the target operating current. At 4 A the on-resistance will be higher — the datasheet curve shows the typical Rds(on) versus drain current — so budget accordingly if you are running near the continuous rating. If your controller outputs 12 V, the ±25 V Vgs max gives plenty of margin. ## 9.8 nC gate charge — light load on the driver That is low enough that many PWM controllers can drive it directly through a series resistor without a separate gate driver IC.","metaTitle":"STD6N65M2 N-Channel 650 V 4 A MOSFET, MDmesh, DPAK","metaDescription":"STD6N65M2 N-channel 650 V 4 A MOSFET in DPAK. Rds(on) 1.35 Ohm at 2 A, 10 V. Gate charge 9.8 nC. Active production, ROHS3 compliant. Available to order.","metaKeywords":null},"attributes":{"series":"MDmesh™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™","Package":"Tape & Reel (TR) Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Surface Mount","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Base Product Number":"STD6N65","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"1.35Ohm @ 2A, 10V","Power Dissipation (Max)":"60W (Tc)","Supplier Device Package":"DPAK","Gate Charge (Qg) (Max) @ Vgs":"9.8 nC @ 10 V","Drain to Source Voltage (Vdss)":"650 V","Input Capacitance (Ciss) (Max) @ Vds":"226 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"4A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.3600","priceTiers":[{"qty":1,"price":"$1.36000","currency":"USD"},{"qty":10,"price":"$1.10900","currency":"USD"},{"qty":100,"price":"$0.86240","currency":"USD"},{"qty":500,"price":"$0.73098","currency":"USD"},{"qty":1000,"price":"$0.59547","currency":"USD"},{"qty":2500,"price":"$0.56056","currency":"USD"},{"qty":5000,"price":"$0.53387","currency":"USD"},{"qty":12500,"price":"$0.50923","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/34d665d865aa24cdcab4beb6559f61bf.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STD6N65M2/alternatives.json"},"ai":{"faq":[{"question":"What is the exact Rds(on) and Vgs(th) of STD6N65M2?","answer":"Maximum Rds(on) is 1.35 Ohm at Id = 2 A and Vgs = 10 V. Maximum gate threshold voltage is 4 V at Id = 250 µA."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STD6N65M2","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STD6N65M2 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}