{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STD6N60DM2","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STD6N60DM2","canonicalUrl":"https://icboms.com/stmicroelectronics/STD6N60DM2","factsUrl":"https://icboms.com/api/mcp/products/STD6N60DM2","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics MDmesh™ DM2 series, N-Channel MOSFET, 600 V Vdss, 5 A continuous drain (Tc), 1.1 Ohm Rds(on) at 2.5 A, 10 V, 6.2 nC gate charge, D-PAK (TO-252) surface mount, -55°C to 150°C junction temperature.","salesMarkdown":"## 600 V N-channel in a D-PAK — the switching workhorse The STD6N60DM2 is an N-channel MOSFET in a D-PAK (TO-252) surface-mount package, rated 600 V Vdss and 5 A continuous drain. Maximum on-resistance is 1.1 Ohm at 2.5 A drain current with 10 V gate drive.","metaTitle":"STD6N60DM2 N-Channel MOSFET, 600 V, 5 A, MDmesh DM2","metaDescription":"STD6N60DM2 N-channel MOSFET from STMicroelectronics MDmesh DM2 series. 600 V Vdss, 5 A continuous drain, 1.1 Ohm Rds(on), 6.2 nC gate charge.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ DM2","Package":"Tape & Reel (TR)","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Surface Mount","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4.75V @ 250µA","Base Product Number":"STD6N60","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"1.1Ohm @ 2.5A, 10V","Power Dissipation (Max)":"60W (Tc)","Supplier Device Package":"D-PAK (TO-252)","Gate Charge (Qg) (Max) @ Vgs":"6.2 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"274 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"5A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.5906","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/708336fd444199e25c577ebcbd0893e6.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STD6N60DM2/alternatives.json"},"ai":{"faq":[{"question":"Can I use STD6N60DM2 in a 48V system?","answer":"Yes. The drain-source breakdown voltage is 600 V, providing more than 10× headroom over a nominal 48 V bus. The 5 A continuous drain rating and 1.1 Ohm Rds(on) are well within typical 48 V power-conversion and load-switching requirements."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STD6N60DM2","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STD6N60DM2 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}