{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STD65N55F3","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STD65N55F3","canonicalUrl":"https://icboms.com/stmicroelectronics/STD65N55F3","factsUrl":"https://icboms.com/api/mcp/products/STD65N55F3","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STripFET™ STD65N55F3, N-Channel MOSFET, 55V Vdss, 80A Id, 8.5mOhm Rds(on) at 10V, DPAK (TO-252), -55°C to 175°C.","salesMarkdown":"## 80 A continuous drain, 8.5 mΩ Rds(on) — what it means for a switching design The STMicroelectronics STD65N55F3 is an N-channel STripFET power MOSFET rated for 55 V drain-source breakdown and 80 A continuous drain current at a 25°C case temperature. The 175°C maximum junction is the ceiling; the 110 W power dissipation rating assumes the case is held at 25°C, so real-world derating curves from the datasheet are the reference for any design that runs the junction above 100°C. The 4 V maximum gate threshold at 250 µA drain current means the device turns on fully with a standard 10 V gate drive, but the threshold window is wide enough that logic-level drive at 5 V may not guarantee full enhancement across temperature. ## DPAK footprint and sourcing The STD65N55F3 comes in a surface-mount DPAK (TO-252-3) package with two leads and a tab that serves as the drain connection and primary thermal path.","metaTitle":"STD65N55F3 N-Channel MOSFET, 80A, 55V, 8.5mOhm","metaDescription":"STD65N55F3 STripFET N-channel MOSFET: 55V Vdss, 80A Id, 8.5mOhm Rds(on) at 10V, DPAK package, -55°C to 175°C.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"STripFET™","Package":"Tape & Reel (TR) Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Surface Mount","Package / Case":"TO-252-3, DPAK (2 Leads + Tab), SC-63","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Base Product Number":"STD65","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"8.5mOhm @ 32A, 10V","Power Dissipation (Max)":"110W (Tc)","Supplier Device Package":"DPAK","Gate Charge (Qg) (Max) @ Vgs":"45 nC @ 10 V","Drain to Source Voltage (Vdss)":"55 V","Input Capacitance (Ciss) (Max) @ Vds":"2200 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"80A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.3100","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/a8b196afd0d41487f1b9d47be9d8d536.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STD65N55F3/alternatives.json"},"ai":{"faq":[{"question":"What is the Rds(on) of STD65N55F3 at 10V gate drive?","answer":"The maximum Rds(on) is 8.5 mΩ at a 10 V gate drive with a 32 A drain current. This is the figure to use for worst-case conduction loss calculations in a switching regulator or motor drive."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STD65N55F3","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STD65N55F3 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}