{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STD65N3LLH5","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STD65N3LLH5","canonicalUrl":"https://icboms.com/stmicroelectronics/STD65N3LLH5","factsUrl":"https://icboms.com/api/mcp/products/STD65N3LLH5","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STripFET™ V, STD65N3LLH5, N-Channel MOSFET, 30V Vdss, 65A Id, 6.9mOhm Rds(on) at 10V, 8nC Qg at 4.5V, DPAK, -55°C to 175°C.","salesMarkdown":"## 30 V, 65 A N-channel in DPAK — STripFET V The STMicroelectronics STD65N3LLH5 is a 30 V, 65 A N-channel power MOSFET built on the STripFET V process, optimized for low-voltage, high-efficiency switching. Gate charge is just 8 nC at 4.5 V, so a modest gate driver can switch it fast without excessive drive current. The DPAK (TO-252) surface-mount package suits medium-power boards where thermal dissipation goes through the tab to the PCB copper. The 6.9 mOhm maximum at 32.5 A and 10 V drive is the headline number for conduction loss budgeting. At the rated 65 A continuous drain current, that resistance would dissipate roughly 29 W — but the 50 W package limit and junction-to-case thermal path mean real-world current is derated by ambient temperature and PCB copper area. The 4.5 V drive voltage option (minimum Rds(on) spec) lets logic-level gate signals turn it on hard, though the on-resistance will be higher than at 10 V; the datasheet curve tells the exact ratio. Input capacitance of 1290 pF at 25 V is moderate, keeping switching losses manageable in the 100–500 kHz range typical for low-voltage converters. No official successor part is listed in the record. Sealed factory reels with consistent date-codes are the preferred lot condition; mixed-date auction lots should be inspected for authenticity before committing to a production run. The 175°C max is 25°C above the more common 150°C limit, giving extra headroom for designs that push the thermal budget. The ±22 V maximum gate-source voltage means standard 12 V or 15 V gate drives are safe, but the 3 V threshold at 250 µA means the device is fully off below 3 V — a consideration when the gate driver loses its supply.","metaTitle":"STD65N3LLH5 N-Channel MOSFET, 30V 65A DPAK, Obsolete","metaDescription":"STD65N3LLH5 STripFET V N-channel MOSFET, 30V Vdss, 65A Id, 6.9mOhm Rds(on) at 10V. DPAK package.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"STripFET™ V","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±22V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Surface Mount","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"3V @ 250µA","Base Product Number":"STD65N","Operating Temperature":"-55°C~175°C(TJ)","Rds On (Max) @ Id, Vgs":"6.9mOhm @ 32.5A, 10V","Power Dissipation (Max)":"50W (Tc)","Supplier Device Package":"DPAK","Gate Charge (Qg) (Max) @ Vgs":"8 nC @ 4.5 V","Drain to Source Voltage (Vdss)":"30 V","Input Capacitance (Ciss) (Max) @ Vds":"1290 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"4.5V, 10V","Current - Continuous Drain (Id) @ 25°C":"65A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.5400","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/cd0df6ac26913cb277a31ed276589069.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STD65N3LLH5/alternatives.json"},"ai":{"faq":[{"question":"Is the STD65N3LLH5 obsolete?","answer":"Yes, the STD65N3LLH5 is listed as obsolete by STMicroelectronics. For legacy BOM lines, the part can be sourced through independent distribution channels on a quoted basis."},{"question":"What is the Rds(on) of the STD65N3LLH5?","answer":"The maximum on-resistance is 6.9 mOhm at 32.5 A drain current with 10 V gate drive. The device also specifies a 4.5 V drive level for logic-level gate signals, though the on-resistance at that lower drive voltage will be higher than the 10 V figure."},{"question":"What package does the STD65N3LLH5 come in?","answer":"The STD65N3LLH5 is supplied in the DPAK package (TO-252-3, DPak with 2 leads and tab, also known as SC-63). It is a surface-mount package intended for PCB mounting with the tab soldered to a copper pad for thermal dissipation."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STD65N3LLH5","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STD65N3LLH5 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}