{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STD60NF55LAT4","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STD60NF55LAT4","canonicalUrl":"https://icboms.com/stmicroelectronics/STD60NF55LAT4","factsUrl":"https://icboms.com/api/mcp/products/STD60NF55LAT4","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics SuperFET® II, Automotive AEC-Q101, N-Channel MOSFET, 55 V Vdss, 60 A continuous drain, 15 mOhm Rds(on) at 30 A / 10 V, D-PAK (TO-252) surface mount, -55 to 175°C junction.","salesMarkdown":"## 55 V, 60 A N-channel — automotive-grade switching Rds(on) is 15 mOhm at 30 A and 10 V drive. The drive voltage is specified at both 5 V and 10 V. ## Gate charge and capacitance — switching speed considerations Total gate charge (Qg) is 40 nC at 5 V gate drive, and input capacitance (Ciss) is 1950 pF at 25 V drain-source. The ±15 V maximum gate-source rating gives margin for overshoot on the gate drive. ## Package and mounting — DPAK (TO-252) surface mount Housed in the D-PAK (TO-252) surface-mount package, the STD60NF55LAT4 has three leads plus a tab that is the drain connection.","metaTitle":"STD60NF55LAT4 N-Channel MOSFET, 55V 60A, AEC-Q101, DPAK","metaDescription":"STD60NF55LAT4 N-channel MOSFET from STMicroelectronics, 55V Vdss, 60A Id, 15mOhm Rds(on) at 10V. AEC-Q101 qualified for automotive.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"Automotive, AEC-Q101, SuperFET® II","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±15V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Surface Mount","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"2V @ 250µA","Base Product Number":"STD60","Operating Temperature":"-55°C~175°C(TJ)","Rds On (Max) @ Id, Vgs":"15mOhm @ 30A, 10V","Power Dissipation (Max)":"110W (Tc)","Supplier Device Package":"D-PAK (TO-252)","Gate Charge (Qg) (Max) @ Vgs":"40 nC @ 5 V","Drain to Source Voltage (Vdss)":"55 V","Input Capacitance (Ciss) (Max) @ Vds":"1950 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"5V, 10V","Current - Continuous Drain (Id) @ 25°C":"60A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.8500","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/f78fd6ba18e59918d19280062ab11699.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STD60NF55LAT4/alternatives.json"},"ai":{"faq":[{"question":"Is STD60NF55LAT4 automotive qualified?","answer":"Yes, the STD60NF55LAT4 is AEC-Q101 qualified as part of STMicroelectronics' Automotive SuperFET® II series, making it suitable for automotive applications including under-hood and chassis-domain electronics."},{"question":"What is the maximum drain current of STD60NF55LAT4?","answer":"This rating is package-limited and assumes adequate heatsinking to keep the junction within the -55°C to 175°C operating range."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STD60NF55LAT4","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STD60NF55LAT4 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}