{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STD60N55F3","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STD60N55F3","canonicalUrl":"https://icboms.com/stmicroelectronics/STD60N55F3","factsUrl":"https://icboms.com/api/mcp/products/STD60N55F3","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STripFET™ III, STD60N55F3, N-Channel MOSFET, 55V Vdss, 80A Id, 8.5mOhm Rds(on) @ 10V, 45nC Qg, DPAK (TO-252), -55 to 175°C.","salesMarkdown":"## What this N-channel STripFET III is and what it handles The STMicroelectronics STD60N55F3 is a 55 V, 80 A N-channel power MOSFET from the STripFET™ III series, built with a planar stripe layout that keeps the on-resistance low at 8.5 mOhm maximum when driven with 10 V on the gate and 32 A through the drain. It's housed in the common DPAK (TO-252) surface-mount package, a three-lead tabbed part that solders down to a PCB pad with a decent thermal pour underneath to pull the heat out. The junction temperature range runs from -55°C to 175°C, so it's comfortable in engine-bay or industrial environments where the ambient climbs. If you have an active BOM line with this order code, you need to qualify a replacement or secure a last-time-buy buffer from the spot market before remaining inventory dries up. ## Rework and layout notes for the DPAK The DPAK (TO-252) is a rework-friendly package if you've got a hot-air station and a bit of practice. The tab also carries the drain current, so the solder joint there is both electrical and thermal.","metaTitle":"STD60N55F3 N-Channel MOSFET, 55V 80A, 8.5mOhm Rds(on), DPAK","metaDescription":"STD60N55F3 N-Channel STripFET III MOSFET, 55V Vdss, 80A Id, 8.5mOhm Rds(on) at 10V. DPAK package, -55 to 175°C.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"STripFET™ III","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Surface Mount","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Base Product Number":"STD60N","Operating Temperature":"-55°C~175°C(TJ)","Rds On (Max) @ Id, Vgs":"8.5mOhm @ 32A, 10V","Power Dissipation (Max)":"110W (Tc)","Supplier Device Package":"DPAK","Gate Charge (Qg) (Max) @ Vgs":"45 nC @ 10 V","Drain to Source Voltage (Vdss)":"55 V","Input Capacitance (Ciss) (Max) @ Vds":"2200 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"80A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":null,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/1ddc8670b4c3fbce6660a73d09152a7a.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STD60N55F3/alternatives.json"},"ai":{"faq":[{"question":"What is the Rds(on) of STD60N55F3?","answer":"The maximum on-resistance is 8.5 mOhm at a drain current of 32 A and a gate-to-source voltage of 10 V. That's the figure to use for conduction loss calculations at the rated drive level."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STD60N55F3","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STD60N55F3 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}