{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STD5NM60-1","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STD5NM60-1","canonicalUrl":"https://icboms.com/stmicroelectronics/STD5NM60-1","factsUrl":"https://icboms.com/api/mcp/products/STD5NM60-1","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics MDmesh™ N-Channel MOSFET, STD5NM60-1, 600V Vdss, 5A Id, 1Ω Rds(on), 18nC Qg, I-PAK through-hole package.","salesMarkdown":"## 600V, 5A N-Channel in MDmesh™ — what the ratings mean for your BOM The STD5NM60-1: The 600V drain-source breakdown voltage gives it headroom for universal-input offline flyback converters, PFC stages, and auxiliary supplies where the DC bus sits around 400V and switching transients can ring well above that. Maximum on-resistance is 1Ω at 2.5A with a 10V gate drive. That 1Ω figure is the ceiling at 25°C junction — expect it to roughly double at 150°C junction, so the conduction loss at full load in a hot enclosure is higher than the datasheet typical suggests. The 18nC total gate charge at 10V means the gate driver only needs to source about 18nC per switching cycle; at 100kHz switching frequency that works out to roughly 1.8mA average drive current, easily handled by a standard gate-driver IC. ## Thermal budget and package — through-hole I-PAK Maximum power dissipation is 96W at case temperature 25°C, but that derates quickly as the case heats up. In practice, with the I-PAK (TO-251AA) through-hole package, the junction-to-ambient thermal resistance is high — expect the 96W figure to be reachable only with a heatsink bolted to the tab or a good copper pour on the PCB. The through-hole leads handle moderate mechanical stress and are easier to hand-solder or rework than surface-mount packages. Operating junction temperature range is -55°C to 150°C, covering industrial and automotive under-hood ambient conditions. The 400pF input capacitance at 25V drain-source means the gate drive sees a moderate capacitive load — a 10Ω gate resistor gives a roughly 4ns RC time constant, fast enough for most hard-switching topologies without excessive ringing.","metaTitle":"STD5NM60-1 N-Channel MOSFET, 600V, 5A, MDmesh™, I-PAK","metaDescription":"STD5NM60-1 N-Channel MOSFET, 600V, 5A, 1Ω Rds(on), 18nC gate charge, I-PAK package. Active production, ROHS3 compliant. Sourced to order.","metaKeywords":null},"attributes":{"series":"MDmesh™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±30V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-251-3 Short Leads, IPak, TO-251AA","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5V @ 250µA","Base Product Number":"STD5NM60","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"1Ohm @ 2.5A, 10V","Power Dissipation (Max)":"96W (Tc)","Supplier Device Package":"I-PAK","Gate Charge (Qg) (Max) @ Vgs":"18 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"400 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"5A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.6500","priceTiers":[{"qty":1,"price":"$2.78000","currency":"USD"},{"qty":10,"price":"$2.49800","currency":"USD"},{"qty":100,"price":"$2.00810","currency":"USD"},{"qty":500,"price":"$1.64984","currency":"USD"},{"qty":1000,"price":"$1.55645","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/8e109f6179a0ad556c1ad7c22dc4e3c8.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STD5NM60-1/alternatives.json"},"ai":{"faq":[{"question":"How does the STD5NM60-1 compare to the STI6N95K5 for a drop-in replacement?","answer":"The STI6N95K5 is a 950V, 9A device in the MDmesh™ K5 series — it has a higher voltage rating and current capability but a different package (I2PAK) and a 1.25Ω Rds(on). The STD5NM60-1 will not drop into a board designed for the STI6N95K5 without verifying the footprint: the I-PAK and I2PAK have different lead spacing and tab dimensions. The gate drive requirements also differ — the STI6N95K5 has 13nC Qg versus 18nC for the STD5NM60-1, so the drive circuit may need adjustment."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STD5NM60-1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STD5NM60-1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}