{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STD5NK60ZT4","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STD5NK60ZT4","canonicalUrl":"https://icboms.com/stmicroelectronics/STD5NK60ZT4","factsUrl":"https://icboms.com/api/mcp/products/STD5NK60ZT4","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STD5NK60ZT4, SuperMESH™ N-Channel MOSFET, 600V Vdss, 5A Id, 1.6 Ohm Rds(on), DPAK (TO-252-3), -55°C to 150°C.","salesMarkdown":"That means STMicroelectronics will continue to supply it for existing production for a time, but they are not accepting new-design wins. ## Key ratings and how they drive the design The 600 V drain-source breakdown voltage gives headroom for universal-input off-line converters. The 1.6 Ohm maximum Rds(on) at 10 V gate drive means the conduction loss at 2.5 A is about 10 W; the 34 nC gate charge keeps the switching transition fast enough for flyback converters without excessive driver burden. The DPAK (TO-252-3) is a common surface-mount power package with a large exposed tab on the bottom. Rework with hot air is straightforward — preheat the board, hit the tab with a hot nozzle, and lift the part when the solder flows. The tab's thermal mass means the hot air needs to stay on it for a few seconds; rushing it lifts the pad.","metaTitle":"STD5NK60ZT4 N-Channel MOSFET, 600V 5A, DPAK","metaDescription":"STD5NK60ZT4 N-Channel 600V 5A MOSFET in DPAK, SuperMESH™ series, 1.6 Ohm Rds(on). NRND status.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"NRND","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"SuperMESH™","Package":"Tape & Reel (TR) Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±30V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Surface Mount","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Product Status":"Not For New Designs","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4.5V @ 50µA","Base Product Number":"STD5NK60","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"1.6Ohm @ 2.5A, 10V","Power Dissipation (Max)":"90W (Tc)","Supplier Device Package":"DPAK","Gate Charge (Qg) (Max) @ Vgs":"34 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"690 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"5A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.7500","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/a3fed52b5881b4cd6842d57fc035637e.pdf","sourceUrl":null},"ai":{"faq":[{"question":"Is STD5NK60ZT4 obsolete?","answer":"It is not fully discontinued, but STMicroelectronics is phasing it out for new designs. Existing production can still be supported through surplus and broker channels."},{"question":"What is the Vgs(th) of STD5NK60ZT4?","answer":"The maximum gate threshold voltage is 4.5 V at a drain current of 50 µA. The recommended drive voltage for minimum on-resistance is 10 V."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STD5NK60ZT4","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STD5NK60ZT4 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}