{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STD5N65M6","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STD5N65M6","canonicalUrl":"https://icboms.com/stmicroelectronics/STD5N65M6","factsUrl":"https://icboms.com/api/mcp/products/STD5N65M6","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics MDmesh™ M6 series, STD5N65M6, N-Channel MOSFET, 650 V Vdss, 4 A Id, 1.3 Ohm Rds(on), 5.1 nC Qg, DPAK surface mount, -55°C to 150°C Tj.","salesMarkdown":"## 650 V N-channel in a DPAK — where it fits The 650 V rating targets offline AC-DC converters, flyback power supplies, and PFC stages where the primary-side switch sees rectified line voltage plus reflected output and leakage-inductance spikes. The MDmesh M6 process keeps the gate charge low at 5.1 nC at 10 V, which reduces the drive power and switching losses in hard-switched topologies. Maximum on-resistance is 1.3 Ohm at 2 A with 10 V gate drive. The 5.1 nC gate charge means a small-signal gate driver can switch the FET without a dedicated driver IC, saving a line item on the BOM. The ±25 V maximum gate-source rating gives margin for gate-drive ringing in noisy environments — a common failure point in offline designs.","metaTitle":"STD5N65M6 N-Channel MOSFET, 650 V, 4 A, DPAK","metaDescription":"STD5N65M6 N-Channel 650 V 4 A MOSFET in DPAK. MDmesh M6 series, 1.3 Ohm Rds(on), 5.1 nC gate charge. Get a quote.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ M6","Package":"Tape & Reel (TR)","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Surface Mount","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"3.75V @ 250µA","Base Product Number":"STD5N65","Operating Temperature":"-55°C~150°C(TJ)","Rds On (Max) @ Id, Vgs":"1.3Ohm @ 2A, 10V","Power Dissipation (Max)":"45W (Tc)","Supplier Device Package":"DPAK","Gate Charge (Qg) (Max) @ Vgs":"5.1 nC @ 10 V","Drain to Source Voltage (Vdss)":"650 V","Input Capacitance (Ciss) (Max) @ Vds":"170 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"0V, 10V","Current - Continuous Drain (Id) @ 25°C":"4A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.7921","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/41d76c43400d2f1ab03513b22bdfce63.pdf","sourceUrl":null},"ai":{"faq":[],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STD5N65M6","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STD5N65M6 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}