{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STD5N52K3","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STD5N52K3","canonicalUrl":"https://icboms.com/stmicroelectronics/STD5N52K3","factsUrl":"https://icboms.com/api/mcp/products/STD5N52K3","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics SuperMESH3™ N-Channel MOSFET, STD5N52K3, 525 V Vdss, 4.4 A Id, 1.5 Ohm Rds(on) at 10 V, DPAK (TO-252), -55°C to 150°C.","salesMarkdown":"## 525 V N-channel MOSFET in DPAK — SuperMESH3™ series The device is designed for high-voltage switched-mode power supplies, offline converters, and lighting ballasts where the DPAK footprint and 70 W power dissipation capability fit medium-power stages. ## 1.5 Ohm Rds(on) — gate drive and conduction loss The 1.5 Ohm maximum on-resistance is specified at 2.2 A drain current with a 10 V gate-source voltage. Gate charge is 17 nC at 10 V. This part is suitable for qualification into new production BOMs without near-term obsolescence risk. For dual-sourcing or second-source evaluation, the base product number STD5N52 identifies the family; pin-compatible alternatives within the same SuperMESH3 voltage and current class can be assessed against the specific Rds(on) and gate charge targets of the application. ## Temperature range and package — mounting and environment The DPAK (TO-252) package has a single tab that carries the drain potential; the PCB copper area and thermal vias under the tab determine the effective thermal resistance. The 70 W power dissipation rating assumes the tab is soldered to a sufficient copper land — a layout review is recommended for continuous operation above 2 A.","metaTitle":"STD5N52K3 N-Channel MOSFET, 525 V, 4.4 A, SuperMESH3","metaDescription":"STD5N52K3 N-channel MOSFET from STMicroelectronics SuperMESH3 series. 525 V Vdss, 4.4 A Id, 1.5 Ohm Rds(on) at 10 V. Active lifecycle.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"SuperMESH3™","Package":"Tape & Reel (TR) Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±30V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Surface Mount","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4.5V @ 50µA","Base Product Number":"STD5N52","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"1.5Ohm @ 2.2A, 10V","Power Dissipation (Max)":"70W (Tc)","Supplier Device Package":"DPAK","Gate Charge (Qg) (Max) @ Vgs":"17 nC @ 10 V","Drain to Source Voltage (Vdss)":"525 V","Input Capacitance (Ciss) (Max) @ Vds":"545 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"4.4A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.2900","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/6e6b9f84c734e17ddb42e3668aea6a31.pdf","sourceUrl":null},"ai":{"faq":[],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STD5N52K3","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STD5N52K3 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}