{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STD5N20LT4","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STD5N20LT4","canonicalUrl":"https://icboms.com/stmicroelectronics/STD5N20LT4","factsUrl":"https://icboms.com/api/mcp/products/STD5N20LT4","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STripFET™ STD5N20LT4, N-Channel MOSFET, 200 V Vdss, 5 A Id, 700 mOhm Rds(on) at 5 V, 6 nC Qg, DPAK surface mount, -55 to 150 °C.","salesMarkdown":"Maximum on-resistance is 700 mOhm at 2.5 A drain current with a 5 V gate drive. That is a relatively high Rds(on) for a 200 V part, which means conduction loss will be noticeable if you push the full 5 A — at that current the dissipation in the channel alone is 17.5 W, well within the 33 W package limit but demanding a good thermal path to the PCB copper. Gate charge is only 6 nC at 5 V, so a logic-level output or a modest gate driver can switch this MOSFET at moderate frequencies without a lot of drive current. Input capacitance is 242 pF at 25 V drain-source, which keeps the switching node capacitance low and helps with fast turn-on edges. ## Temperature range and package — field-fit reality No lab bench needed to swap one, but the tab solder joint matters. ## Lifecycle and sourcing — still in production It is ROHS3 compliant.","metaTitle":"STD5N20LT4 N-Channel MOSFET, 200 V, 5 A, DPAK","metaDescription":"STD5N20LT4 N-Channel MOSFET, 200 V drain-source, 5 A continuous, 700 mOhm Rds(on) at 5 V gate drive. Active lifecycle.","metaKeywords":null},"attributes":{"series":"STripFET™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"STripFET™","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Surface Mount","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"2.5V @ 50µA","Base Product Number":"STD5N20","Operating Temperature":"-55°C~150°C(TJ)","Rds On (Max) @ Id, Vgs":"700mOhm @ 2.5A, 5V","Power Dissipation (Max)":"33W (Tc)","Supplier Device Package":"DPAK","Gate Charge (Qg) (Max) @ Vgs":"6 nC @ 5 V","Drain to Source Voltage (Vdss)":"200 V","Input Capacitance (Ciss) (Max) @ Vds":"242 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"5V","Current - Continuous Drain (Id) @ 25°C":"5A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.1200","priceTiers":[{"qty":1,"price":"$1.12000","currency":"USD"},{"qty":10,"price":"$1.00000","currency":"USD"},{"qty":100,"price":"$0.77940","currency":"USD"},{"qty":500,"price":"$0.64388","currency":"USD"},{"qty":1000,"price":"$0.55948","currency":"USD"},{"qty":2500,"price":"$0.55948","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/69656d7506eeb4a2854245ee348a9b04.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STD5N20LT4/alternatives.json"},"ai":{"faq":[{"question":"What is the Vgs(th) of STD5N20LT4?","answer":"Maximum gate threshold voltage is 2.5 V at 50 µA drain current. That is a logic-level threshold, so a 5 V gate drive will fully enhance the channel."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STD5N20LT4","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STD5N20LT4 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}