{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STD52P3LLH6","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STD52P3LLH6","canonicalUrl":"https://icboms.com/stmicroelectronics/STD52P3LLH6","factsUrl":"https://icboms.com/api/mcp/products/STD52P3LLH6","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STD52P3LLH6, STripFET™ H6 series, P-Channel MOSFET, 30 Vdss, 52 A Id, 12 mOhm Rds(on), DPAK surface-mount, Tape & Reel.","salesMarkdown":"## DPAK footprint and thermal integration Housed in the TO-252-3 (DPAK) surface-mount package with the tab as the drain connection, the STD52P3LLH6 requires a copper land pattern that matches the tab area for thermal dissipation. ## Active production, RoHS3 compliant — sourcing posture The base product number STD52 covers the family; the suffix P3LLH6 encodes the P-channel polarity, the 30 V rating, the low-threshold gate, and the H6 generation.","metaTitle":"STD52P3LLH6 P-Channel MOSFET, 30 V, 52 A, DPAK","metaDescription":"STD52P3LLH6 P-channel MOSFET from STMicroelectronics STripFET H6 series. 30 Vdss, 52 A Id, 12 mOhm Rds(on) at 10 V. DPAK surface-mount. Active production","metaKeywords":null},"attributes":{"series":"STripFET™ H6","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"STripFET™ H6","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"P-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Surface Mount","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"2.5V @ 250µA","Base Product Number":"STD52","Operating Temperature":"175°C(TJ)","Rds On (Max) @ Id, Vgs":"12mOhm @ 26A, 10V","Power Dissipation (Max)":"70W (Tc)","Supplier Device Package":"DPAK","Gate Charge (Qg) (Max) @ Vgs":"33 nC @ 4.5 V","Drain to Source Voltage (Vdss)":"30 V","Input Capacitance (Ciss) (Max) @ Vds":"3350 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"4.5V, 10V","Current - Continuous Drain (Id) @ 25°C":"52A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.6400","priceTiers":[{"qty":1,"price":"$1.64000","currency":"USD"},{"qty":10,"price":"$1.47700","currency":"USD"},{"qty":100,"price":"$1.18740","currency":"USD"},{"qty":500,"price":"$0.97554","currency":"USD"},{"qty":1000,"price":"$0.92032","currency":"USD"},{"qty":2500,"price":"$0.92032","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/c89ac484e15e914d17e1d0a89ba50179.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STD52P3LLH6/alternatives.json"},"ai":{"faq":[{"question":"Can STD52P3LLH6 replace STD80N3LL in an existing design?","answer":"No. The STD80N3LL is an N-channel MOSFET; the STD52P3LLH6 is P-channel. The polarity difference means the gate drive and load connections are reversed — a direct drop-in is not possible without rewiring the circuit and inverting the gate signal."},{"question":"What gate drive voltage does STD52P3LLH6 need for minimum on-resistance?","answer":"The part also supports 4.5 V drive for lower-voltage logic, but the on-resistance at 4.5 V is higher than the 10 V figure — the datasheet's typical curve should be referenced for the exact value."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STD52P3LLH6","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STD52P3LLH6 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}