{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STD50N03L-1","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STD50N03L-1","canonicalUrl":"https://icboms.com/stmicroelectronics/STD50N03L-1","factsUrl":"https://icboms.com/api/mcp/products/STD50N03L-1","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STripFET™ III, STD50N03L-1, N-Channel MOSFET, 30 V Vdss, 40 A continuous drain, 10.5 mOhm Rds(on) at 20 A, TO-251-3 (I-PAK) through-hole package.","salesMarkdown":"Its 30 V drain-source breakdown (Vdss) gives headroom for a 24 V nominal bus with transients, while the 40 A continuous drain rating at 25 °C case temperature supports moderate-current loads — though you'll derate that figure at elevated ambient. ## Gate drive and switching — why the 5 V threshold matters The STD50N03L-1 specifies a maximum gate threshold of 1 V at 250 µA, which means it turns on hard with logic-level gate drives — 5 V or 10 V are both listed as drive voltages. It is no longer in production from STMicroelectronics, and no direct successor order code is provided in the record. For new designs, look at current STripFET™ F7 or STripFET™ H7 series N-channel MOSFETs in the same voltage and current class — many are pin-compatible in the I-PAK footprint.","metaTitle":"STD50N03L-1 MOSFET, N-Channel 30V 40A, TO-251","metaDescription":"STD50N03L-1 N-Channel MOSFET, 30V Vdss, 40A continuous drain, 10.5mOhm Rds(on) at 20A. Request quote for availability.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"STripFET™ III","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-251-3 Short Leads, IPak, TO-251AA","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"1V @ 250µA","Base Product Number":"STD50N","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"10.5mOhm @ 20A, 10V","Power Dissipation (Max)":"60W (Tc)","Supplier Device Package":"I-PAK","Gate Charge (Qg) (Max) @ Vgs":"14 nC @ 5 V","Drain to Source Voltage (Vdss)":"30 V","Input Capacitance (Ciss) (Max) @ Vds":"1434 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"5V, 10V","Current - Continuous Drain (Id) @ 25°C":"40A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":null,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/bfe3108b848bd2c1d19e4b02b7940434.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STD50N03L-1/alternatives.json"},"ai":{"faq":[{"question":"What is the replacement for STD50N03L-1?","answer":"For a pin-compatible alternative in the same I-PAK footprint, consider current STripFET™ F7 or H7 series N-channel MOSFETs with similar 30 V Vdss and 40 A current rating — verify the gate charge and Rds(on) against your design."},{"question":"What is the Rds(on) of STD50N03L-1?","answer":"At 5 V gate drive the Rds(on) will be higher — check the typical curve in the datasheet for your operating point."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STD50N03L-1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STD50N03L-1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}