{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STD4NS25T4","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STD4NS25T4","canonicalUrl":"https://icboms.com/stmicroelectronics/STD4NS25T4","factsUrl":"https://icboms.com/api/mcp/products/STD4NS25T4","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STD4NS25T4, MESH OVERLAY™ N-Channel MOSFET, 250 V Vdss, 4 A Id, 1.1 Ohm Rds(on) @ 10 V, 27 nC Qg, DPAK (TO-252), 150°C junction.","salesMarkdown":"## Obsolete – sourcing reality For BOM lines that already specify this part, procurement must source through independent distribution or surplus channels. A direct pin-compatible replacement within the same ST MESH OVERLAY family is not listed, so any substitution requires a parametric cross-check against the 250 V, 4 A, 1.1 Ohm, DPAK footprint. ## Gate drive and switching note The drive voltage for minimum on-resistance is 10 V, with a maximum gate-source rating of ±20 V. For designs that already use the STD4NS25T4, the 4 V gate threshold at 250 µA is typical for a standard-threshold MOSFET – ensure the driver's output voltage exceeds 10 V to achieve the rated Rds(on).","metaTitle":"STD4NS25T4 N-Channel MOSFET, 250 V, 4 A, DPAK – Obsolete","metaDescription":"STD4NS25T4 N-Channel MOSFET, 250 V Vdss, 4 A continuous drain, 1.1 Ohm Rds(on) at 10 V. MESH OVERLAY series in DPAK.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MESH OVERLAY™","Package":"Tape & Reel (TR) Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Surface Mount","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Base Product Number":"STD4N","Operating Temperature":"150°C (TJ)","Rds On (Max) @ Id, Vgs":"1.1Ohm @ 2A, 10V","Power Dissipation (Max)":"50W (Tc)","Supplier Device Package":"DPAK","Gate Charge (Qg) (Max) @ Vgs":"27 nC @ 10 V","Drain to Source Voltage (Vdss)":"250 V","Input Capacitance (Ciss) (Max) @ Vds":"355 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"4A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.6700","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/b89f629a86b60319e3fb603ffa4499c8.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STD4NS25T4/alternatives.json"},"ai":{"faq":[{"question":"What is the equivalent of STD4NS25T4?","answer":"No official direct replacement or cross-reference is listed for the STD4NS25T4. Any substitute must be evaluated against the 250 V Vdss, 4 A Id, 1.1 Ohm Rds(on) at 10 V, and DPAK footprint. A parametric search for N-channel MOSFETs in the same voltage and current class is the practical route."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STD4NS25T4","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STD4NS25T4 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}