{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STD4N80K5","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STD4N80K5","canonicalUrl":"https://icboms.com/stmicroelectronics/STD4N80K5","factsUrl":"https://icboms.com/api/mcp/products/STD4N80K5","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics SuperMESH5™, STD4N80K5, N-Channel MOSFET, 800V Vdss, 3A Id, 2.5Ohm Rds(on) @ 1.5A 10V, 10.5nC Qg, DPAK (TO-252), -55°C~150°C TJ.","salesMarkdown":"## 800 V, 3 A — primary-side flyback switch in a DPAK Maximum Rds(on) is 2.5 Ohm at 1.5 A drain current with 10 V gate drive. At 3 A full load, conduction loss runs I²R — roughly 22.5 W at the max rating, which is within the 60 W package limit but requires good heatsinking. The 10.5 nC total gate charge keeps switching losses moderate at 60–100 kHz, so the junction temperature stays manageable without a high-current gate driver. ## Active lifecycle — still a current production part STMicroelectronics lists the STD4N80K5 as Active on the product status. No last-time-buy or end-of-life notice applies. That means normal distributor stocking, no forced redesign, and standard lead times through the usual supply chain. ## Temperature range and application environment The 150°C TJ max gives headroom for high-ambient designs if the thermal pad is properly stitched to a copper plane.","metaTitle":"STD4N80K5 N-Channel MOSFET, 800V 3A SuperMESH5 DPAK","metaDescription":"STD4N80K5 N-Channel 800V 3A MOSFET in DPAK. 2.5 Ohm Rds(on) at 10V, 10.5 nC gate charge. Active lifecycle.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"SuperMESH5™","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±30V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Surface Mount","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5V @ 100µA","Base Product Number":"STD4N80","Operating Temperature":"-55°C~150°C(TJ)","Rds On (Max) @ Id, Vgs":"2.5Ohm @ 1.5A, 10V","Power Dissipation (Max)":"60W (Tc)","Supplier Device Package":"DPAK","Gate Charge (Qg) (Max) @ Vgs":"10.5 nC @ 10 V","Drain to Source Voltage (Vdss)":"800 V","Input Capacitance (Ciss) (Max) @ Vds":"175 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"3A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.7600","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":null,"sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of STD4N80K5?","answer":"Maximum on-resistance is 2.5 Ohm at 1.5 A drain current with 10 V gate drive."},{"question":"Is STD4N80K5 obsolete or active?","answer":"Active."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STD4N80K5","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STD4N80K5 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}