{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STD47N10F7AG","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STD47N10F7AG","canonicalUrl":"https://icboms.com/stmicroelectronics/STD47N10F7AG","factsUrl":"https://icboms.com/api/mcp/products/STD47N10F7AG","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STD47N10F7AG, STripFET™ F7, N-Channel MOSFET, 100V Vdss, 45A Id, 18mΩ Rds(on), DPAK, AEC-Q101, -55°C to 175°C.","salesMarkdown":"## Gate drive: 10 V recommended for minimum Rds(on) The drive voltage for rated on-resistance is 10 V, with a maximum gate-source rating of ±10 V. If your controller only provides 5 V gate drive, the on-resistance will be higher than the 18 mΩ headline figure; check the typical Rds(on) vs Vgs curve in the datasheet to confirm it still meets your conduction loss target. ## 1640 pF input capacitance — switching speed and driver sizing Input capacitance (Ciss) is 1640 pF at 50 V drain-source bias. For very high-frequency designs (above 200 kHz), the gate charge loop inductance in the DPAK package becomes a factor — keep the driver physically close and use a dedicated gate return trace.","metaTitle":"STD47N10F7AG N-Channel MOSFET, 100V, 45A, DPAK, Automotive","metaDescription":"STD47N10F7AG automotive N-channel MOSFET, 100V, 45A, 18mΩ Rds(on), AEC-Q101, -55°C to 175°C.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Grade":"Automotive","Series":"STripFET™ F7","Package":"Tape & Reel (TR) Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±10V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Surface Mount","Qualification":"AEC-Q101","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4.5V @ 250µA","Base Product Number":"STD47","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"18mOhm @ 22.5A, 10V","Power Dissipation (Max)":"60W (Tc)","Supplier Device Package":"DPAK","Gate Charge (Qg) (Max) @ Vgs":"25 nC @ 10 V","Drain to Source Voltage (Vdss)":"100 V","Input Capacitance (Ciss) (Max) @ Vds":"1640 pF @ 50 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"45A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.6300","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/b95797e3a3545ba086356bfc4771cb7a.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STD47N10F7AG/alternatives.json"},"ai":{"faq":[{"question":"What is the replacement for STD47N10F7AG?","answer":"The part is currently active, so no substitution is needed at this time. For dual-sourcing options, look at other automotive 100 V N-channel MOSFETs in DPAK with similar Rds(on) and gate charge — but verify pin-compatibility and parametric fit against your specific application."},{"question":"What is STD47N10F7AG's automotive grade and qualification?","answer":"The part is listed with an Automotive grade and carries AEC-Q101 qualification, meaning it is qualified for automotive stress tests including high-temperature reverse bias and temperature cycling."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STD47N10F7AG","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STD47N10F7AG when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}