{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STD40P8F6AG","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STD40P8F6AG","canonicalUrl":"https://icboms.com/stmicroelectronics/STD40P8F6AG","factsUrl":"https://icboms.com/api/mcp/products/STD40P8F6AG","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STD40P8F6AG, Automotive P-Channel MOSFET, 80 Vdss, 40 A Id, 28 mOhm Rds(on) @ 20 A 10 V, AEC-Q101, TO-252-3 (DPak).","salesMarkdown":"The STD40P8F6AG is an STMicroelectronics automotive-grade P-channel power MOSFET in a TO-252 (DPak) surface-mount package. The 40 A continuous rating at Tc=25°C is the package-limited current at the case; real-world derating depends on PCB copper area under the DPak tab and ambient airflow. Input capacitance Ciss of 4112 pF at 25 V drain-source is moderate; the switching losses at 20 kHz will be dominated by the gate-drive current available, not by the Miller plateau duration. No official successor or replacement part has been issued — the base product number STD40 covers the family, and this specific AEC-Q101 variant is the automotive-grade offering. ## TO-252 DPak — footprint and thermal management The TO-252-3 (DPak) package has two leads plus a large tab that forms the drain connection. The supplier device package is D-PAK (TO-252).","metaTitle":"STD40P8F6AG P-Channel MOSFET, 80 V 40 A, AEC-Q101, TO-252","metaDescription":"STMicroelectronics STD40P8F6AG automotive P-channel MOSFET, 80 Vdss, 40 A Id, 28 mOhm Rds(on), AEC-Q101 qualified.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Grade":"Automotive","Series":"-","Package":"Tape & Reel (TR) Cut Tape (CT)","FET Type":"P-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Surface Mount","Qualification":"AEC-Q101","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Base Product Number":"STD40","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"28mOhm @ 20A, 10V","Power Dissipation (Max)":"100W (Tc)","Supplier Device Package":"D-PAK (TO-252)","Gate Charge (Qg) (Max) @ Vgs":"73 nC @ 10 V","Drain to Source Voltage (Vdss)":"80 V","Input Capacitance (Ciss) (Max) @ Vds":"4112 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"40A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.8900","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/d957f033d2967f63d75a07fab374a0f3.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STD40P8F6AG/alternatives.json"},"ai":{"faq":[{"question":"What is the Vgs threshold of STD40P8F6AG?","answer":"The maximum gate-source threshold voltage is 4 V at a drain current of 250 µA. The recommended drive voltage for minimum on-resistance is 10 V."},{"question":"Does STD40P8F6AG have a P-Channel?","answer":"Yes, the STD40P8F6AG is a P-Channel MOSFET. This makes it suitable for high-side load switching where the source connects to the positive supply rail and the drain connects to the load."},{"question":"Is STD40P8F6AG suitable for automotive use?","answer":"Yes. The part is graded Automotive and is AEC-Q101 qualified."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STD40P8F6AG","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STD40P8F6AG when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}