{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STD40N2LH5","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STD40N2LH5","canonicalUrl":"https://icboms.com/stmicroelectronics/STD40N2LH5","factsUrl":"https://icboms.com/api/mcp/products/STD40N2LH5","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STD40N2LH5, STripFET™ V, N-Channel MOSFET, 25V Vdss, 40A Id, 11.8mOhm Rds(on) at 20A, DPAK (TO-252-3).","salesMarkdown":"## STD40N2LH5 — 25 V N-channel in DPAK, now obsolete The STD40N2LH5 is an STMicroelectronics STripFET™ V N-channel MOSFET in a DPAK (TO-252-3) surface-mount package. Gate charge is just 6.3 nC at 5 V, so a modest driver can hit fast edges. The 25 V drain-to-source rating suits 12 V and low-voltage 24 V rails where headroom is tight. ## Obsolete — sourcing via independent distribution STMicroelectronics has marked the STD40N2LH5 obsolete. At 20 A the max on-resistance is 11.8 mΩ with 10 V gate drive. The threshold voltage maxes at 1 V at 250 µA, so the device turns on cleanly with logic-level drive down to 5 V. Minimum Rds(on) is specified at 5 V drive as well, giving flexibility in gate-drive design. Housed in the TO-252-3 (DPAK) with the tab as the drain connection. Maximum power dissipation is 35 W at case temperature, which demands a solid thermal interface — via stitching under the tab and a reasonable copper area on the board.","metaTitle":"STD40N2LH5 N-Channel MOSFET, 25V 40A 11.8mΩ DPAK","metaDescription":"STD40N2LH5 STripFET V N-Channel MOSFET, 25V Vdss, 40A Id, 11.8mΩ Rds(on).","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"STripFET™ V","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±22V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Surface Mount","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"1V @ 250µA","Base Product Number":"STD40","Operating Temperature":"-55°C~175°C(TJ)","Rds On (Max) @ Id, Vgs":"11.8mOhm @ 20A, 10V","Power Dissipation (Max)":"35W (Tc)","Supplier Device Package":"DPAK","Gate Charge (Qg) (Max) @ Vgs":"6.3 nC @ 5 V","Drain to Source Voltage (Vdss)":"25 V","Input Capacitance (Ciss) (Max) @ Vds":"700 pF @ 20 V","Drive Voltage (Max Rds On, Min Rds On)":"5V, 10V","Current - Continuous Drain (Id) @ 25°C":"40A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":null,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/4c581317a80312ce697b7ce267b509d6.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STD40N2LH5/alternatives.json"},"ai":{"faq":[{"question":"Is STD40N2LH5 obsolete?","answer":"Yes, STMicroelectronics has marked the STD40N2LH5 obsolete."},{"question":"What is the Rds(on) of STD40N2LH5?","answer":"Maximum on-resistance is 11.8 mΩ at 20 A drain current with 10 V gate drive."},{"question":"What is the Vgs threshold of STD40N2LH5?","answer":"Maximum gate threshold voltage is 1 V at 250 µA drain current."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STD40N2LH5","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STD40N2LH5 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}