{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STD3NM60N","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STD3NM60N","canonicalUrl":"https://icboms.com/stmicroelectronics/STD3NM60N","factsUrl":"https://icboms.com/api/mcp/products/STD3NM60N","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STD3NM60N, MDmesh™ II series, N-Channel MOSFET, 600 V Vdss, 1.8 Ohm Rds(on) @ 1.65 A, 10 V, 9.5 nC gate charge, DPAK (TO-252) surface mount, -55°C to 150°C junction temperature.","salesMarkdown":"## 600 V N-channel MDmesh™ II MOSFET in a DPAK The STMicroelectronics STD3NM60N is an N-channel power MOSFET built on the MDmesh™ II technology, rated for a drain-to-source voltage of 600 V. ## 1.8 Ohm Rds(on) and 9.5 nC gate charge — switching loss budget The 1.8 Ohm maximum on-resistance at a 1.65 A drain current and 10 V gate drive sets the conduction loss floor for a given load. For a 600 V rated part, this combination of Rds(on) and Qg points to a device optimised for moderate-frequency flyback, PFC boost, or auxiliary supply stages where switching losses need to stay contained. ## Temperature range and junction limits The base product number STD3 covers a family of voltage and current variants, which can simplify qualification across multiple power stages in a single BOM.","metaTitle":"STD3NM60N N-Channel MOSFET, 600 V, 1.8 Ohm, DPAK","metaDescription":"STMicroelectronics STD3NM60N N-channel MDmesh™ II MOSFET. 600 V Vdss, 1.8 Ohm Rds(on) at 1.65 A, 9.5 nC gate charge. DPAK package. Active lifecycle.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ II","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Surface Mount","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Base Product Number":"STD3","Operating Temperature":"-55°C~150°C(TJ)","Rds On (Max) @ Id, Vgs":"1.8Ohm @ 1.65A, 10V","Power Dissipation (Max)":"50W (Tc)","Supplier Device Package":"DPAK","Gate Charge (Qg) (Max) @ Vgs":"9.5 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"188 pF @ 50 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"3.3A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.2300","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/1500d6e1fdf8becb416f8696bd0c0264.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STD3NM60N/alternatives.json"},"ai":{"faq":[],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STD3NM60N","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STD3NM60N when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}