{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STD3NM60-1","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STD3NM60-1","canonicalUrl":"https://icboms.com/stmicroelectronics/STD3NM60-1","factsUrl":"https://icboms.com/api/mcp/products/STD3NM60-1","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics MDmesh™ N-Channel MOSFET, STD3NM60-1, 600 V Vdss, 3 A Id (Tc), 1.5 Ohm Rds(on) at 10 V, 42 W Pd, through-hole TO-251-3 (IPak) package.","salesMarkdown":"## 600 V MDmesh™ N-Channel MOSFET in an IPak through-hole package Buyers should evaluate pin-compatible alternatives within the MDmesh™ family for new designs, though no specific second-source alternate is documented here. ## 1.5 Ohm Rds(on) — conduction loss and thermal design At 1.5 A, the I²R loss is approximately 3.4 W, which must be managed within the 42 W power dissipation limit at the case. The gate drive voltage of 10 V is required to achieve the specified Rds(on); operating at lower gate voltages will increase on-resistance significantly. The 14 nC gate charge is moderate, allowing direct drive from a PWM controller or gate driver without excessive switching losses in low-frequency applications. ## Through-hole IPak — mounting and thermal considerations The TO-251-3 (IPak) package is a through-hole variant with short leads, designed for vertical mounting on a PCB. The IPak footprint is similar to the DPAK (TO-252) but with leads for through-hole soldering, offering better mechanical retention in high-vibration environments.","metaTitle":"STD3NM60-1 N-Channel MOSFET, 600 V, 3 A, MDmesh™, IPak","metaDescription":"STD3NM60-1 N-Channel MOSFET from STMicroelectronics MDmesh™ series. 600 V Vdss, 3 A Id, 1.5 Ohm Rds(on) at 10 V. Through-hole IPak (TO-251) package.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±30V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-251-3 Short Leads, IPak, TO-251AA","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5V @ 250µA","Base Product Number":"STD3N","Operating Temperature":"-65°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"1.5Ohm @ 1.5A, 10V","Power Dissipation (Max)":"42W (Tc)","Supplier Device Package":"I-PAK","Gate Charge (Qg) (Max) @ Vgs":"14 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"324 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"3A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":null,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/fa6f0ceddd52e68a3ee37a76f4b7a879.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STD3NM60-1/alternatives.json"},"ai":{"faq":[{"question":"What is the closest pin-compatible alternative to STD3NM60-1?","answer":"No official pin-compatible successor or second-source alternate is documented in the available records. For new designs, evaluate current STMicroelectronics MDmesh™ N-channel MOSFETs with 600 V rating and similar package (IPak or DPAK) and current rating."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STD3NM60-1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STD3NM60-1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}