{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STD3NK80ZT4","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STD3NK80ZT4","canonicalUrl":"https://icboms.com/stmicroelectronics/STD3NK80ZT4","factsUrl":"https://icboms.com/api/mcp/products/STD3NK80ZT4","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STD3NK80ZT4, SuperMESH N-Channel MOSFET, 800 V Vdss, 2.5 A Id, 4.5 Ohm Rds(on), 10 V drive, 19 nC Qg, DPAK (TO-252), -55 to 150 °C.","salesMarkdown":"The STD3NK80ZT4 is an STMicroelectronics N-channel MOSFET built on the SuperMESH™ technology platform, designed for high-voltage switching applications where the drain-to-source voltage reaches 800 V. The 19 nC typical gate charge keeps the drive losses manageable in a 100 kHz-class converter, and the 70 W power dissipation ceiling at the case tells you the thermal design — heatsink or PCB copper area — needs attention if the duty cycle pushes junction temperature near the 150 °C limit. The base product number is STD3NK80, and the 'Z' suffix indicates lead-free / RoHS-compliant plating. For dual-sourcing or second-source qualification, the pin-compatible alternatives within the same SuperMESH family share the same DPAK footprint and 800 V rating, though on-resistance and current ratings vary by variant — verify the specific Rds(on) and Id against your load profile before substituting. In a 100 kHz hard-switched flyback, the average gate-drive power is roughly Qg × Vgs × fsw — about 19 mW at 10 V and 100 kHz — which a standard MOSFET driver can handle without a heatsink. If you are pushing higher frequency, the gate-charge curve in the datasheet tells you the Miller plateau voltage — that is where the switching loss actually lives.","metaTitle":"STD3NK80ZT4 N-Channel MOSFET, 800 V, 2.5 A, DPAK","metaDescription":"STMicroelectronics STD3NK80ZT4 SuperMESH N-channel MOSFET: 800 V Vdss, 2.5 A Id, 4.5 Ohm Rds(on), DPAK. Active lifecycle.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"SuperMESH™","Package":"Tape & Reel (TR) Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±30V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Surface Mount","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4.5V @ 50µA","Base Product Number":"STD3NK80","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"4.5Ohm @ 1.25A, 10V","Power Dissipation (Max)":"70W (Tc)","Supplier Device Package":"DPAK","Gate Charge (Qg) (Max) @ Vgs":"19 nC @ 10 V","Drain to Source Voltage (Vdss)":"800 V","Input Capacitance (Ciss) (Max) @ Vds":"485 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"2.5A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.5900","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/2ea3a6e57d4cc77aebcb3b0ba906dd31.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STD3NK80ZT4/alternatives.json"},"ai":{"faq":[],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STD3NK80ZT4","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STD3NK80ZT4 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}