{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STD3NK50ZT4","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STD3NK50ZT4","canonicalUrl":"https://icboms.com/stmicroelectronics/STD3NK50ZT4","factsUrl":"https://icboms.com/api/mcp/products/STD3NK50ZT4","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STD3NK50ZT4, SuperMESH™ series, N-Channel MOSFET, 500 V Vdss, 2.3 A Id, 3.3 Ω Rds(on) at 10 V, TO-252-3 (DPAK), -55°C to 150°C.","salesMarkdown":"The 500 V Vdss sets the absolute maximum drain-source voltage the device can block in the off state. For a universal-input flyback (85–265 VAC), the reflected voltage plus leakage spike typically reaches 450–500 V, so this part sits right at the margin — a 600 V rated device would give more headroom, but the STD3NK50ZT4 works if the snubber is well-tuned and the leakage inductance is controlled. The 2.3 A continuous current at 25°C case derates to about 1.5 A at 100°C case temperature (using the 45 W maximum power dissipation and the junction-to-case thermal resistance from the datasheet), so the load current in the application must stay below that derated value to keep the junction under 150°C. ## Package and mounting — DPAK (TO-252-3) The STD3NK50ZT4 comes in the DPAK (TO-252-3) surface-mount package with two leads and a tab that forms the drain connection. The device is RoHS compliant per the standard ST EU declaration, and the base product number STD3NK50 covers the DPAK variant in the SuperMESH™ family.","metaTitle":"STD3NK50ZT4 N-Channel MOSFET, 500 V, 2.3 A, SuperMESH™","metaDescription":"STD3NK50ZT4 N-Channel MOSFET from STMicroelectronics SuperMESH™ series. 500 V drain-source, 2.3 A continuous, 3.3 Ω Rds(on) at 10 V. Active lifecycle.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"SuperMESH™","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±30V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Surface Mount","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4.5V @ 50µA","Base Product Number":"STD3NK50","Operating Temperature":"-55°C~150°C(TJ)","Rds On (Max) @ Id, Vgs":"3.3Ohm @ 1.15A, 10V","Power Dissipation (Max)":"45W (Tc)","Supplier Device Package":"DPAK","Gate Charge (Qg) (Max) @ Vgs":"15 nC @ 10 V","Drain to Source Voltage (Vdss)":"500 V","Input Capacitance (Ciss) (Max) @ Vds":"280 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"2.3A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.2900","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/6bef80a714990e584f83bb70c6d668bf.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STD3NK50ZT4/alternatives.json"},"ai":{"faq":[],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STD3NK50ZT4","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STD3NK50ZT4 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}