{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STD3N62K3","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STD3N62K3","canonicalUrl":"https://icboms.com/stmicroelectronics/STD3N62K3","factsUrl":"https://icboms.com/api/mcp/products/STD3N62K3","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics SuperMESH3™ series, N-Channel MOSFET, STD3N62K3, 620V Vdss, 2.7A Id, 2.5Ohm Rds(on), DPAK (TO-252) package, Tape & Reel.","salesMarkdown":"## Active N-channel MOSFET in DPAK for medium-voltage switching The STD3N62K3 is an N-channel MOSFET from STMicroelectronics' SuperMESH3™ series, rated for 620 V drain-to-source and 2.7 A continuous drain current at 25 °C case temperature. Housed in a DPAK (TO-252) surface-mount package, it targets medium-voltage applications such as auxiliary power supplies, flyback converters, and lighting ballasts where the 620 V breakdown margin covers off-line rectified mains with headroom. The 150 °C maximum junction temperature allows operation in thermally constrained enclosures, provided the 45 W power dissipation at case temperature is not exceeded. ## Parametric profile: gate charge and on-resistance trade-off Maximum on-resistance is 2.5 Ohm at 1.4 A drain current with 10 V gate drive — the Rds(on) is specified at the drive voltage the part is designed for, so budget the gate drive rail accordingly. Gate charge totals 13 nC at 10 V, keeping the drive current modest at moderate switching frequencies; the input capacitance of 385 pF at 25 V drain-source sets the switching loss ceiling in hard-switched topologies. The 4.5 V gate threshold at 50 µA drain current means the device is fully enhanced with standard 10 V gate logic, but the threshold is high enough to resist spurious turn-on from coupled noise in a 12 V gate-drive rail. ## Lifecycle and compliance status The part is RoHS3 compliant (2011/65/EU + 2015/863), which covers the majority of commercial and industrial BOM requirements without a separate exemption review.","metaTitle":"STD3N62K3 N-Channel MOSFET, 620V, 2.7A, DPAK","metaDescription":"STD3N62K3 from STMicroelectronics SuperMESH3™ series, N-channel MOSFET, 620V Vdss, 2.7A Id, 2.5Ohm Rds(on), DPAK package. Active production, RoHS3 compliant.","metaKeywords":null},"attributes":{"series":"SuperMESH3™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"SuperMESH3™","Package":"Tape & Reel (TR) Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±30V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Surface Mount","Package / Case":"TO-252-3, DPAK (2 Leads + Tab), SC-63","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4.5V @ 50µA","Base Product Number":"STD3N62","Operating Temperature":"150°C (TJ)","Rds On (Max) @ Id, Vgs":"2.5Ohm @ 1.4A, 10V","Power Dissipation (Max)":"45W (Tc)","Supplier Device Package":"DPAK","Gate Charge (Qg) (Max) @ Vgs":"13 nC @ 10 V","Drain to Source Voltage (Vdss)":"620 V","Input Capacitance (Ciss) (Max) @ Vds":"385 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"2.7A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.0100","priceTiers":[{"qty":1,"price":"$1.06000","currency":"USD"},{"qty":10,"price":"$0.94600","currency":"USD"},{"qty":100,"price":"$0.73750","currency":"USD"},{"qty":500,"price":"$0.60924","currency":"USD"},{"qty":1000,"price":"$0.52938","currency":"USD"},{"qty":2500,"price":"$0.52938","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/2645123347a419296b7030d1ccb21663.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STD3N62K3/alternatives.json"},"ai":{"faq":[{"question":"How does STD3N62K3 compare to the STB4NK60ZT4?","answer":"The STB4NK60ZT4 is a 600 V, 4 A N-channel MOSFET in a DPAK package with 2 Ohm Rds(on) and 26 nC gate charge. The STD3N62K3 has a higher 620 V drain rating but lower 2.7 A continuous current and higher 2.5 Ohm on-resistance. The gate charge is roughly half (13 nC vs 26 nC), which reduces drive losses at higher switching frequencies. The packages are both DPAK, but the pinout should be verified against the PCB footprint before substitution."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STD3N62K3","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STD3N62K3 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}