{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STD3LN80K5","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STD3LN80K5","canonicalUrl":"https://icboms.com/stmicroelectronics/STD3LN80K5","factsUrl":"https://icboms.com/api/mcp/products/STD3LN80K5","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics MDmesh™ STD3LN80K5, N-channel MOSFET, 800 V Vdss, 2 A Id, 3.25 Ohm Rds(on) @ 10 V, 2.63 nC Qg, DPAK package, -55 to 150 °C junction.","salesMarkdown":"At 1 A load current, expect roughly 3.25 W dissipation from Rds(on) alone — the 45 W package power limit gives headroom, but the junction temperature rise from that dissipation at 25 °C ambient needs a copper area on the drain tab to stay within the -55 to 150 °C junction range. Switching losses stay low even at moderate frequencies, and the drive circuit can be a simple logic-level gate driver without a booster stage. Input capacitance measures 102 pF at 100 V drain-source — a small number that keeps the Miller plateau short and the switching edges clean. ## Package and mounting — DPAK with tab soldered The STD3LN80K5 comes in the TO-252-3 (DPak) surface-mount package, which is a 2-lead plus tab outline. ## Temperature range — rated for industrial and automotive environments That covers the full industrial temperature band and extends into the under-hood automotive range. The 150 °C maximum junction allows the part to handle the self-heating from conduction and switching losses in a warm enclosure without derating prematurely.","metaTitle":"STD3LN80K5 N-Channel MOSFET, 800 V, 2 A, DPAK","metaDescription":"STD3LN80K5 MDmesh™ N-channel MOSFET, 800 V drain-source, 2 A continuous drain, 3.25 Ohm Rds(on) at 10 V, DPAK package, active lifecycle.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±30V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Surface Mount","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5V @ 100µA","Base Product Number":"STD3LN80","Operating Temperature":"-55°C~150°C(TJ)","Rds On (Max) @ Id, Vgs":"3.25Ohm @ 1A, 10V","Power Dissipation (Max)":"45W (Tc)","Supplier Device Package":"DPAK","Gate Charge (Qg) (Max) @ Vgs":"2.63 nC @ 10 V","Drain to Source Voltage (Vdss)":"800 V","Input Capacitance (Ciss) (Max) @ Vds":"102 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"2A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.5200","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/200aadc6a7ab6be87cebf1d6309f5ba0.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STD3LN80K5/alternatives.json"},"ai":{"faq":[{"question":"Can STD3LN80K5 be used for high-voltage switching?","answer":"Yes, the 800 V drain-to-source rating qualifies it for off-line switching topologies such as flyback converters and auxiliary power supplies operating from rectified mains up to 240 VAC."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STD3LN80K5","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STD3LN80K5 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}