{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STD35P6LLF6","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STD35P6LLF6","canonicalUrl":"https://icboms.com/stmicroelectronics/STD35P6LLF6","factsUrl":"https://icboms.com/api/mcp/products/STD35P6LLF6","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STripFET™ F6 series, STD35P6LLF6, P-Channel MOSFET, 60 V Vdss, 35 A continuous drain, 28 mOhm Rds(on) at 10 V, DPAK surface-mount package, 175 °C junction temperature.","salesMarkdown":"The STMicroelectronics STD35P6LLF6 is a P-Channel power MOSFET from the STripFET™ F6 series, built for high-side load switching and DC-DC conversion where a positive supply rail needs to be gated. On-resistance is specified at 28 mOhm maximum when driven with 10 V on the gate at 17.5 A drain current. The 70 W power dissipation limit at the case and a 175 °C maximum junction temperature allow this part to operate in thermally constrained spots like engine-bay electronics or enclosed power supplies, provided the PCB copper or heatsink can extract the heat. ## Gate charge and switching behavior Total gate charge is 30 nC at 4.5 V gate drive, which translates to modest gate-drive losses at switching frequencies typical of load switches and low-frequency DC-DC converters. Input capacitance measures 3780 pF at 25 V drain-source, a figure that matters when sizing the gate resistor and estimating turn-on delay. The gate-source threshold voltage maxes out at 2.5 V at 250 µA drain current. The 4.5 V minimum recommended drive voltage for rated Rds(on) confirms a gate driver is needed. Housed in the DPAK (TO-252-3) surface-mount package with an exposed tab, the STD35P6LLF6 relies on the PCB copper pour on the drain tab for heat spreading.","metaTitle":"STD35P6LLF6 P-Channel MOSFET, 60 V, 35 A, DPAK","metaDescription":"ST STripFET F6 P-channel MOSFET rated 60 Vdss, 35 A continuous drain, 28 mOhm Rds(on) at 10 V. Active product in DPAK package.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"STripFET™ F6","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"P-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Surface Mount","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"2.5V @ 250µA","Base Product Number":"STD35","Operating Temperature":"175°C(TJ)","Rds On (Max) @ Id, Vgs":"28mOhm @ 17.5A, 10V","Power Dissipation (Max)":"70W (Tc)","Supplier Device Package":"DPAK","Gate Charge (Qg) (Max) @ Vgs":"30 nC @ 4.5 V","Drain to Source Voltage (Vdss)":"60 V","Input Capacitance (Ciss) (Max) @ Vds":"3780 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"4.5V, 10V","Current - Continuous Drain (Id) @ 25°C":"35A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.7200","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/de420a14394aa0e688d826d06aea5a38.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STD35P6LLF6/alternatives.json"},"ai":{"faq":[],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STD35P6LLF6","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STD35P6LLF6 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}