{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STD35NF06LT4","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STD35NF06LT4","canonicalUrl":"https://icboms.com/stmicroelectronics/STD35NF06LT4","factsUrl":"https://icboms.com/api/mcp/products/STD35NF06LT4","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STD35NF06LT4, STripFET™ II, N-Channel MOSFET, 60 V Vdss, 35 A continuous drain, 17 mOhm Rds(on) max at 10 V, DPAK (TO-252) surface mount, -55°C to 175°C junction temperature.","salesMarkdown":"At 35 A continuous drain current, the device dissipates about 21 W in conduction alone at that on-resistance, so the 80 W power dissipation rating at the case provides headroom for switching losses and ambient derating. Gate charge of 33 nC at 4.5 V tells you the gate-drive energy per switching cycle. A 4.5 V logic-level drive is sufficient to achieve the rated Rds(on), which simplifies the gate-drive circuit in low-voltage systems. The 80 W power dissipation rating assumes the tab is properly heatsunk through the board — without a good thermal via stitch to an inner-layer plane, the junction temperature will exceed the 175°C limit well below 35 A continuous.","metaTitle":"STD35NF06LT4 N-Channel MOSFET, 60V, 35A, 17mOhm","metaDescription":"STD35NF06LT4 N-Channel MOSFET from STMicroelectronics STripFET™ II series. 60V Vdss, 35A continuous drain, 17mOhm Rds(on) at 10V. Active lifecycle.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"STripFET™ II","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±16V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Surface Mount","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"2.5V @ 250µA","Base Product Number":"STD35","Operating Temperature":"-55°C~175°C(TJ)","Rds On (Max) @ Id, Vgs":"17mOhm @ 17.5A, 10V","Power Dissipation (Max)":"80W (Tc)","Supplier Device Package":"DPAK","Gate Charge (Qg) (Max) @ Vgs":"33 nC @ 4.5 V","Drain to Source Voltage (Vdss)":"60 V","Input Capacitance (Ciss) (Max) @ Vds":"1700 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"4.5V, 10V","Current - Continuous Drain (Id) @ 25°C":"35A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.6200","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/01a4a12de5a7a25af76bdb0c755ed817.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STD35NF06LT4/alternatives.json"},"ai":{"faq":[{"question":"What is the Vgs threshold of STD35NF06LT4?","answer":"The maximum gate threshold voltage is 2.5 V at a drain current of 250 µA."},{"question":"What is the power dissipation of STD35NF06LT4?","answer":"The maximum power dissipation is 80 W at the case temperature."},{"question":"Is STD35NF06LT4 RoHS compliant?","answer":"The STD35NF06LT4 is listed with a Tape & Reel and Cut Tape packaging option, which typically indicates RoHS compliance for STMicroelectronics STripFET™ II series devices. Verify the specific date code and lot against the manufacturer's RoHS certificate at order time."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STD35NF06LT4","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STD35NF06LT4 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}