{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STD30NF06T4","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STD30NF06T4","canonicalUrl":"https://icboms.com/stmicroelectronics/STD30NF06T4","factsUrl":"https://icboms.com/api/mcp/products/STD30NF06T4","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STD30NF06T4, STripFET™ II series, N-channel MOSFET, 60V Vdss, 28A Id, 28mOhm Rds(on) at 10V, 58nC Qg, DPAK package, -55°C to 175°C TJ.","salesMarkdown":"## 60V, 28A N-channel switch in DPAK — where this part lands in the BOM The STMicroelectronics STD30NF06T4 is a 60V, 28A N-channel power MOSFET from the STripFET™ II generation, housed in a surface-mount DPAK (TO-252) package. It is a general-purpose switching device for DC-DC converters, motor drives, load switches, and power management in industrial and automotive-adjacent applications. The headline specs — 28 mOhm max on-resistance at 10V gate drive and a 175°C maximum junction temperature — define its conduction loss and thermal headroom in a 12V or 24V bus design. ## 28 mOhm at 15A — the conduction loss anchor The 28 mOhm Rds(on) maximum at 15A drain current with a 10V gate drive sets the I²R loss for the steady-state on-period. In a 10A load, that's about 2.8W conduction loss at the FET — enough to need the DPAK tab soldered to a reasonable copper area on the PCB. The gate drive requirement is 10V for the rated on-resistance; the 4V threshold at 250 µA means the device will start conducting at logic-level voltages, but the Rds(on) will be significantly higher below 10V. This is a standard-gate-threshold part, not a logic-level FET. A maximum gate charge of 58 nC at 10V gate voltage is moderate for a 60V, 28A device. The input capacitance is 1750 pF at 25V Vds. Together, these numbers tell the designer that a standard gate-driver IC with 1A to 2A peak source/sink capability will switch this FET in the 50–100 ns range, keeping switching losses manageable in the 50–200 kHz range. The 1750 pF input capacitance also means the gate-drive power per cycle is modest, around 0.6 µJ at 10V, so the driver's average dissipation is not a concern at typical switching frequencies. ## Thermal capability and environment — 175°C junction is the differentiator The 175°C TJ max is typical for automotive-grade power MOSFETs and suits under-hood, motor-drive, and high-ambient industrial enclosures where the junction sees sustained thermal cycling. The 70W power dissipation at case temperature (Tc) is the package limit; real-world dissipation will be lower with the DPAK on a standard FR-4 footprint. ## Package and mounting — DPAK for automated assembly The STD30NF06T4 comes in the DPAK (TO-252) surface-mount package, also designated as TO-252-3, DPak (2 Leads + Tab), SC-63. The mounting type is surface mount, so it flows through standard reflow profiles.","metaTitle":"STD30NF06T4 N-Channel MOSFET, 60V 28A, 28mOhm, DPAK","metaDescription":"STMicroelectronics STD30NF06T4 N-channel MOSFET, 60V Vdss, 28A continuous drain, 28mOhm Rds(on) at 10V, DPAK package, -55°C to 175°C junction.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"STripFET™ II","Package":"Tape & Reel (TR) Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Surface Mount","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Base Product Number":"STD30","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"28mOhm @ 15A, 10V","Power Dissipation (Max)":"70W (Tc)","Supplier Device Package":"DPAK","Gate Charge (Qg) (Max) @ Vgs":"58 nC @ 10 V","Drain to Source Voltage (Vdss)":"60 V","Input Capacitance (Ciss) (Max) @ Vds":"1750 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"28A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.3300","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/fa22a0c21d8022a32df6ca916e552e90.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STD30NF06T4/alternatives.json"},"ai":{"faq":[{"question":"What is the closest pin-compatible alternative to STD30NF06T4?","answer":"A functional equivalent would be any 60V, 28A-rated N-channel MOSFET in DPAK with similar Rds(on) and gate charge — a parametric search across ST's own STripFET™ II family or competitor parts like Infineon's OptiMOS or onsemi's DPAK portfolio would be needed to find a drop-in replacement."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STD30NF06T4","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STD30NF06T4 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}