{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STD30NE06L","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STD30NE06L","canonicalUrl":"https://icboms.com/stmicroelectronics/STD30NE06L","factsUrl":"https://icboms.com/api/mcp/products/STD30NE06L","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STripFET™ STD30NE06L, N-Channel MOSFET, 60 V Vdss, 30 A Id, 28 mOhm Rds(on) @ 10 V, DPAK surface-mount package.","salesMarkdown":"The gate threshold voltage is specified at 2.5 V maximum with 250 µA drain current, allowing logic-level gate drive from 5 V rails. Total gate charge is 41 nC at 5 V gate-source voltage, and input capacitance measures 2370 pF at 25 V drain-source bias. These figures indicate the gate-drive energy per switching cycle and the capacitive load the driver sees; a 5 V gate-drive rail is sufficient to turn the device fully on, though minimum Rds(on) is achieved at 10 V drive. ## Lifecycle status — obsolete, sourced on the secondary market STMicroelectronics no longer manufactures this part in volume through primary distribution channels.","metaTitle":"STD30NE06L N-Channel MOSFET, 60V 30A STripFET, DPAK","metaDescription":"STD30NE06L N-channel MOSFET, 60V drain-source, 30A continuous drain, 28mOhm Rds(on) at 10V. STripFET series, DPAK package.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"STripFET™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Surface Mount","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"2.5V @ 250µA","Base Product Number":"STD30N","Operating Temperature":"175°C (TJ)","Rds On (Max) @ Id, Vgs":"28mOhm @ 15A, 10V","Power Dissipation (Max)":"55W (Tc)","Supplier Device Package":"DPAK","Gate Charge (Qg) (Max) @ Vgs":"41 nC @ 5 V","Drain to Source Voltage (Vdss)":"60 V","Input Capacitance (Ciss) (Max) @ Vds":"2370 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"5V, 10V","Current - Continuous Drain (Id) @ 25°C":"30A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.5000","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/44c28c0ffa3a03e236df5a0b417fcd41.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STD30NE06L/alternatives.json"},"ai":{"faq":[{"question":"Where can I buy STD30NE06L?","answer":"The STD30NE06L is obsolete from the manufacturer. Current pricing and stock availability are confirmed at the time of quote."},{"question":"What is the equivalent or replacement for STD30NE06L?","answer":"No official replacement or cross-reference is listed by STMicroelectronics for the STD30NE06L. A replacement should match the 60 V drain-source voltage, 30 A continuous drain current, 28 mOhm maximum Rds(on) at 10 V, and DPAK package. A same-function N-channel MOSFET in the STripFET family with comparable ratings may be considered, but pin-compatibility must be verified against the DPAK footprint and gate-drive requirements."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STD30NE06L","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STD30NE06L when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}