{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STD30N6LF6AG","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STD30N6LF6AG","canonicalUrl":"https://icboms.com/stmicroelectronics/STD30N6LF6AG","factsUrl":"https://icboms.com/api/mcp/products/STD30N6LF6AG","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STripFET™ F6 series, STD30N6LF6AG, N-Channel MOSFET, 60V Vdss, 24A continuous drain, 25mOhm Rds(on) at 10V, AEC-Q101 qualified, DPAK surface mount package, -55°C to 175°C junction temperature.","salesMarkdown":"## 60V automotive N-channel MOSFET in DPAK The on-resistance is specified at 25 mOhm maximum with 12A drain current and 10V gate drive. Total gate charge is 26 nC at 10V. Input capacitance is 1320 pF at 25 V. The 2.5V maximum threshold voltage at 250 µA drain current ensures the device turns on reliably with 3.3V or 5V logic outputs across the full temperature range. ## DPAK package and mounting The STD30N6LF6AG comes in the TO-252-3 DPAK surface-mount package with two leads and a tab. MSL level should be verified from the latest ST packaging data for moisture sensitivity.","metaTitle":"STD30N6LF6AG N-Channel MOSFET, 60V 24A, AEC-Q101, DPAK","metaDescription":"STD30N6LF6AG automotive N-channel MOSFET from STripFET F6 series. 60V Vdss, 24A continuous drain, 25mOhm Rds(on) at 10V. AEC-Q101 qualified.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"Automotive, AEC-Q101, STripFET™ F6","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Surface Mount","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"2.5V @ 250µA","Base Product Number":"STD30","Operating Temperature":"-55°C~175°C(TJ)","Rds On (Max) @ Id, Vgs":"25mOhm @ 12A, 10V","Power Dissipation (Max)":"40W (Tc)","Supplier Device Package":"DPAK","Gate Charge (Qg) (Max) @ Vgs":"26 nC @ 10 V","Drain to Source Voltage (Vdss)":"60 V","Input Capacitance (Ciss) (Max) @ Vds":"1320 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"4.5V, 10V","Current - Continuous Drain (Id) @ 25°C":"24A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.2300","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/26d913616c7afde28a79dab02dce43e6.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STD30N6LF6AG/alternatives.json"},"ai":{"faq":[{"question":"Is STD30N6LF6AG automotive qualified?","answer":"Yes, the STD30N6LF6AG is AEC-Q101 qualified and belongs to the Automotive series of STripFET™ F6 power MOSFETs. This qualification covers the device-level reliability testing required for automotive applications, including temperature cycling, HTRB, and HAST."},{"question":"What is the Rds(on) of STD30N6LF6AG?","answer":"The maximum on-resistance is 25 mOhm at 12A drain current with 10V gate drive."},{"question":"What is the Vgs(th) of STD30N6LF6AG?","answer":"The maximum gate threshold voltage is 2.5V at 250 µA drain current. This low threshold ensures reliable turn-on with 3.3V or 5V logic-level gate drives across the full operating temperature range."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STD30N6LF6AG","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STD30N6LF6AG when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}