{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STD2NM60T4","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STD2NM60T4","canonicalUrl":"https://icboms.com/stmicroelectronics/STD2NM60T4","factsUrl":"https://icboms.com/api/mcp/products/STD2NM60T4","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics MDmesh™ STD2NM60T4, N-Channel MOSFET, 600 V Vdss, 2 A Id, 3.2 Ω Rds(on) @ 1 A, 10 V, 8.4 nC Qg, DPAK package.","salesMarkdown":"## 600 V MDmesh™ MOSFET in DPAK — what this part does It fits best as a low-side auxiliary switch, a clamp FET, or a pre-regulator pass device where conduction losses are secondary to voltage rating and simplicity. ## Obsolete — what the buyer needs to know For new designs, a current-production MDmesh™ or equivalent 600 V N-channel MOSFET in DPAK should be selected. Expect supply to come from surplus or last-time-buy inventory, so date-code consistency and original packaging should be verified. The DPAK footprint is a standard surface-mount power package with an exposed tab for heat sinking. Maximum power dissipation is 46 W at case temperature, but the junction temperature limit is 150°C. The gate-source voltage is rated to ±30 V, giving margin for overshoot in hard-switched circuits.","metaTitle":"STD2NM60T4 N-Channel MOSFET, 600 V, 2 A, MDmesh™","metaDescription":"STD2NM60T4 N-Channel 600 V MOSFET, 2 A continuous drain, 3.2 Ω Rds(on), 8.4 nC gate charge. DPAK package.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™","Package":"Tape & Reel (TR)","FET Type":"N-Channel","Vgs (Max)":"±30V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Surface Mount","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5V @ 250µA","Base Product Number":"STD2N","Operating Temperature":"150°C (TJ)","Rds On (Max) @ Id, Vgs":"3.2Ohm @ 1A, 10V","Power Dissipation (Max)":"46W (Tc)","Supplier Device Package":"DPAK","Gate Charge (Qg) (Max) @ Vgs":"8.4 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"160 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"2A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.5515","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/ace2a49d1f39cbfd7de9c1fc4216f4cd.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the replacement for STD2NM60T4?","answer":"There is no official pin-compatible replacement listed by STMicroelectronics. For new designs, select a current-production 600 V N-channel MOSFET in a DPAK package from the MDmesh™ or equivalent family, matching the 2 A current rating and gate drive requirements."},{"question":"Is STD2NM60T4 obsolete?","answer":"Yes, the STD2NM60T4 is officially marked obsolete by STMicroelectronics."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STD2NM60T4","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STD2NM60T4 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}