{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STD2NK60Z-1","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STD2NK60Z-1","canonicalUrl":"https://icboms.com/stmicroelectronics/STD2NK60Z-1","factsUrl":"https://icboms.com/api/mcp/products/STD2NK60Z-1","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STD2NK60Z-1, N-Channel MOSFET, SuperMESH™ series, 600 V Vdss, 1.4 A Id, 8 Ohm Rds(on), TO-251-3 (IPak) through-hole package, -55°C to 150°C junction temperature.","salesMarkdown":"## 600 V N-channel MOSFET for offline flyback and auxiliary supplies ## On-resistance and gate charge — the switching loss trade-off With a maximum Rds(on) of 8 Ohm at Vgs=10 V and Id=700 mA, the conduction loss at 1 A is roughly 8 W — the designer must size the heatsink and PCB copper area to keep the junction below 150°C. Total gate charge is 10 nC at Vgs=10 V, which keeps the gate-drive energy low enough for a small-signal driver or a simple resistor-capacitor bootstrap circuit in low-frequency flyback converters. Input capacitance is 170 pF at Vds=25 V, so the switching speed is limited more by the gate-drive source impedance than by the device itself. For new designs, consider a current-production SuperMESH™ N-channel MOSFET in a similar voltage and current class — the TO-251 (IPak) footprint is shared with several active ST parts in the same series.","metaTitle":"STD2NK60Z-1 N-Channel MOSFET, 600 V, 1.4 A, SuperMESH","metaDescription":"STD2NK60Z-1 N-channel MOSFET from STMicroelectronics SuperMESH series. 600 V Vdss, 1.4 A Id, 8 Ohm Rds(on). Obsolete.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"SuperMESH™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±30V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-251-3 Short Leads, IPak, TO-251AA","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4.5V @ 50µA","Base Product Number":"STD2N","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"8Ohm @ 700mA, 10V","Power Dissipation (Max)":"45W (Tc)","Supplier Device Package":"I-PAK","Gate Charge (Qg) (Max) @ Vgs":"10 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"170 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"1.4A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.0500","priceTiers":null},"links":{"datasheetUrl":null,"sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STD2NK60Z-1/alternatives.json"},"ai":{"faq":[{"question":"What is the Vgs threshold for STD2NK60Z-1?","answer":"The maximum gate threshold voltage is 4.5 V at a drain current of 50 µA. The recommended drive voltage for minimum on-resistance is 10 V."},{"question":"What package does the STD2NK60Z-1 come in?","answer":"It is supplied in a TO-251-3 short-lead through-hole package (IPak, TO-251AA), with the supplier device package designated as I-PAK."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STD2NK60Z-1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STD2NK60Z-1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-16T15:51:34.245Z","lastPublished":"2026-07-16T15:51:34.245Z","indexable":true}}