{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STD2N62K3","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STD2N62K3","canonicalUrl":"https://icboms.com/stmicroelectronics/STD2N62K3","factsUrl":"https://icboms.com/api/mcp/products/STD2N62K3","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics SuperMESH3™ series, STD2N62K3, N-Channel MOSFET, 620 V drain-source, 2.2 A continuous drain, 3.6 Ohm Rds(on) at 10 V, DPAK (TO-252) surface-mount package.","salesMarkdown":"## 620 V N-channel in a DPAK — offline flyback and auxiliary supply work The 620 V Vdss rating suits offline flyback converters, auxiliary power supplies, and PFC stages. ## On-resistance and gate charge — conduction and switching budget Maximum on-resistance is 3.6 Ohm at 1.1 A drain current with 10 V gate drive. The 45 W power dissipation rating can handle conduction losses with adequate copper area on the DPAK tab. These numbers are low enough that a standard gate driver or a PWM controller output can switch it at tens of kilohertz without excessive drive current. The base product number is STD2N62, so variants with different package or tape options share the same die.","metaTitle":"STD2N62K3 N-Channel MOSFET, 620 V, 2.2 A, DPAK","metaDescription":"STMicroelectronics STD2N62K3 N-channel MOSFET, 620 Vdss, 2.2 A continuous drain, 3.6 Ohm Rds(on) at 10 V. Active production, DPAK package.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"SuperMESH3™","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±30V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Surface Mount","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4.5V @ 50µA","Base Product Number":"STD2N62","Operating Temperature":"150°C(TJ)","Rds On (Max) @ Id, Vgs":"3.6Ohm @ 1.1A, 10V","Power Dissipation (Max)":"45W (Tc)","Supplier Device Package":"DPAK","Gate Charge (Qg) (Max) @ Vgs":"15 nC @ 10 V","Drain to Source Voltage (Vdss)":"620 V","Input Capacitance (Ciss) (Max) @ Vds":"340 pF @ 50 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"2.2A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.5800","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/a7f3ec7e14aa3a32f8b20538a41fcc41.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STD2N62K3/alternatives.json"},"ai":{"faq":[],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STD2N62K3","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STD2N62K3 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}