{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STD2HNK60Z-1","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STD2HNK60Z-1","canonicalUrl":"https://icboms.com/stmicroelectronics/STD2HNK60Z-1","factsUrl":"https://icboms.com/api/mcp/products/STD2HNK60Z-1","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics SuperMESH™ STD2HNK60Z-1, N-Channel MOSFET, 600V Vdss, 2A Id, 4.8 Ohm Rds(on), TO-251 IPAK, -55°C to 150°C.","salesMarkdown":"The TO-251 (IPAK) through-hole package with short leads is a space-saver on single-layer boards — the tab is the drain, so the copper pad area under it sets the thermal resistance to ambient. ## Parametric depth — gate charge and switching edge Gate charge totals 15 nC at 10 V, which keeps the drive current low — a 100 kHz hard-switched flyback needs only about 1.5 mA average from the controller's driver. Input capacitance is 280 pF at 25 V drain-source, so the switching node rise time is dominated by the gate drive impedance rather than the miller plateau.","metaTitle":"STD2HNK60Z-1 N-Channel MOSFET, 600V 2A, TO-251 IPAK","metaDescription":"STD2HNK60Z-1 N-channel 600V 2A MOSFET in TO-251 IPAK. Rds(on) 4.8 Ohm at 1A, 10V. Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"SuperMESH™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"SuperMESH™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±30V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-251-3 Short Leads, IPak, TO-251AA","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4.5V @ 50µA","Base Product Number":"STD2HNK60","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"4.8Ohm @ 1A, 10V","Power Dissipation (Max)":"45W (Tc)","Supplier Device Package":"TO-251 (IPAK)","Gate Charge (Qg) (Max) @ Vgs":"15 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"280 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"2A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.4400","priceTiers":[{"qty":1,"price":"$1.51000","currency":"USD"},{"qty":10,"price":"$1.35100","currency":"USD"},{"qty":100,"price":"$1.05320","currency":"USD"},{"qty":500,"price":"$0.87004","currency":"USD"},{"qty":1000,"price":"$0.75600","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/aa458e8477f2e5c73588e37c1a7c18fe.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STD2HNK60Z-1/alternatives.json"},"ai":{"faq":[{"question":"What is the Rds(on) of STD2HNK60Z-1?","answer":"The maximum Rds(on) is 4.8 Ohm at 1 A drain current with 10 V gate drive."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STD2HNK60Z-1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STD2HNK60Z-1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}